We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
201. | BTM1A16E | Dual dufferential transceiver Driver termination 220 Ohm. Receiver termination 110 Ohm. | AGERE | Plastic SOJ | 16 | -40°C | 125°C | 301K |
202. | BTM1A16G | Dual dufferential transceiver Driver termination 220 Ohm. Receiver termination 110 Ohm. | AGERE | Plastic SOIC | 16 | -40°C | 125°C | 301K |
203. | BTM1A16NB | Dual dufferential transceiver Driver termination 220 Ohm. Receiver termination 110 Ohm. | AGERE | Plastic SOIC/NB | 16 | -40°C | 125°C | 301K |
204. | BTM1A16P | Dual dufferential transceiver Driver termination 220 Ohm. Receiver termination 110 Ohm. | AGERE | Plastic DIP | 16 | -40°C | 125°C | 301K |
205. | IXTM10N100 | 1000V HiPerFET power MOSFET | IXYS | TO-204 | 4 | -55°C | 150°C | 106K |
206. | IXTM11N80 | 800V HiPerFET power MOSFET | IXYS | TO-204 | 4 | -55°C | 150°C | 98K |
207. | IXTM12N100 | 1000V HiPerFET power MOSFET | IXYS | TO-204 | 4 | -55°C | 150°C | 106K |
208. | IXTM12N90 | 900V MegaMOS FET | IXYS | TO-204 | 4 | -55°C | 150°C | 102K |
209. | IXTM13N80 | 800V HiPerFET power MOSFET | IXYS | TO-204 | 4 | -55°C | 150°C | 98K |
210. | TM100SZ-M | 100A - transistor module for medium power general use, non-insulated type | MITS | - | 9 | -40°C | 150°C | 54K |
211. | TM10T3B-H | 20A - transistor module for medium power general use, insulated type | MITS | - | 5 | -40°C | 150°C | 53K |
212. | TM10T3B-M | 20A - transistor module for medium power general use, insulated type | MITS | - | 5 | -40°C | 150°C | 53K |
213. | TM130EZ-24 | 130A - transistor module for medium power general use, insulated type | MITS | - | 6 | -40°C | 150°C | 60K |
214. | TM130EZ-2H | 130A - transistor module for medium power general use, insulated type | MITS | - | 6 | -40°C | 150°C | 60K |
215. | TM130GZ-2H | 130A - transistor module for medium power general use, insulated type | MITS | - | 6 | -40°C | 150°C | 60K |
216. | TM130RZ-24 | 130A - transistor module for medium power general use, insulated type | MITS | - | 6 | -40°C | 150°C | 60K |
217. | TM130RZ-2H | 130A - transistor module for medium power general use, insulated type | MITS | - | 6 | -40°C | 150°C | 60K |
218. | TM150SA-6 | 150A - transistor module for medium power general use, non-insulated type | MITS | - | 9 | -40°C | 150°C | 53K |
219. | TM15T3B-H | 30A - transistor module for medium power general use, insulated type | MITS | - | 5 | -40°C | 150°C | 56K |
220. | TM15T3B-M | 30A - transistor module for medium power general use, insulated type | MITS | - | 5 | -40°C | 150°C | 56K |