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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 28C256ATM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 22. | 28C256ATM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 41K |
| 23. | 28C64ATM-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 42K |
| 24. | 28C64ATM-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | -55°C | 125°C | 42K |
| 25. | 29C010TM-1 | High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM | TRBIC | TSOP | 32 | -55°C | 125°C | 52K |
| 26. | 29C010TM-1 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. | TURBO | TSOP | 32 | -55°C | 125°C | 52K |
| 27. | 29C021TM-1 | High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM | TRBIC | TSOP | 32 | -55°C | 125°C | 54K |
| 28. | 29C021TM-1 | High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. | TURBO | TSOP | 32 | -55°C | 125°C | 54K |
| 29. | A29L160TM-120 | 120ns; active read:9mA; programm/erase:20mA 0.2uA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMIC | SOP | 32 | 0°C | 70°C | 433K |
| 30. | A29L160TM-120 | 120ns; 9mA 2M x 8bit/1M x 16bit CMOS 3.0V-only boot sector flash memory | AMICC | SOP | 44 | 0°C | 70°C | 429K |
| 31. | HM62V256LTM-10 | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | HIT | TSOP | 28 | 0°C | 70°C | 111K |
| 32. | HM62V256LTM-10SL | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | HIT | TSOP | 28 | 0°C | 70°C | 111K |
