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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 638 Displaying: 461 - 480| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 461. | TIP121 | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K | | 462. | TIP122 | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K | | 463. | TIP127 | PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K | | 464. | TIP2955 | PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 465. | TIP3055 | NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 466. | TIP31B | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K | | 467. | TIP31C | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K | | 468. | TIP31C | NPN, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K | | 469. | TIP32 | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K | | 470. | TIP32A | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K | | 471. | TIP32B | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K | | 472. | TIP32C | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K | | 473. | TIP32C | PNP, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K | | 474. | TIP35A | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 475. | TIP35B | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 476. | TIP35C | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 477. | TIP36A | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 478. | TIP36B | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 479. | TIP36C | PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 480. | TIP41C | NPN, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, PD = 65W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K |
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