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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 141. | NTE6232 | Powerblock module. Average forward current 100A. Max repetitive peak reverse and off-state blocking voltage 1600V. | NTE | - | 3 | -40°C | 150°C | 27K |
| 142. | NTE6232 | Powerblock module. Average forward current 100A. Max repetitive peak reverse and off-state blocking voltage 1600V. | NTE | - | 3 | -40°C | 150°C | 27K |
| 143. | NTE6234 | Powerblock module. Average forward current 195A. Max repetitive peak reverse voltage 1600V. | NTE | - | 3 | -40°C | 150°C | 24K |
| 144. | NTE6236 | Powerblock module. Average forward current 250A. Max repetitive peak reverse voltage 1600V. | NTE | - | 3 | -40°C | 150°C | 24K |
| 145. | NTE6240 | Silicon rectifier, super fast, dual, positive center tap. Max recurrent peak reverse voltage 200V. Max average forward rectified current 16A. | NTE | TO220 | 3 | -65°C | 150°C | 20K |
| 146. | NTE6241 | Silicon rectifier, super fast, dual, center tap. Peak repetitive reverse voltage 200V. Average rectified forward current 8A (per diode), 16A (total device). | NTE | TO220 | 3 | -65°C | 175°C | 20K |
| 147. | NTE6244 | Silicon rectifier, super fast, dual, negative center tap. Max recurrent peak reverse voltage 200V. Max average forward rectified current 16A. | NTE | TO220 | 3 | -65°C | 150°C | 20K |
| 148. | NTE6246 | Ultrafast switchmode power rectifier. Peak repetitive reverse voltage 200V. Average rectified forward current 15A (per lag), 30A (per device). | NTE | - | 3 | -65°C | 175°C | 20K |
| 149. | NTE6247 | Ultrafast switchmode power rectifier. Peak repetitive reverse voltage 600V. Average rectified forward current 15A (per lag), 30A (per device). | NTE | - | 3 | -65°C | 175°C | 20K |
| 150. | NTE6248 | Silicon schottky barrier rectifier. Max recurrent peak reverse voltage 600V. Max average rectified forward current 16A. | NTE | - | 2 | -55°C | 175°C | 19K |
| 151. | NTE6251 | Silicon rectifier. Dual, positive center tap. Max repetitive peak reverse voltage 200V. Max average forward rectified current 30A. | NTE | - | 3 | -55°C | 150°C | 19K |
| 152. | NTE627 | Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current: 6A (per diode), 12A (total device). | NTE | TO220 | 3 | -65°C | 175°C | 17K |
| 153. | NTE627 | Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current: 6A (per diode), 12A (total device). | NTE | TO220 | 3 | -65°C | 175°C | 17K |
| 154. | NTE628 | Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 600V. Average rectifier forward current: 6A (per diode), 12A (total device). | NTE | TO220 | 3 | -65°C | 175°C | 17K |
| 155. | NTE629 | Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current: 8A (per diode), 16A (total device). | NTE | TO220 | 3 | -65°C | 175°C | 18K |
| 156. | NTE63 | Silicon NPN transistor. High gain, low noise aplifier. | NTE | - | 4 | -65°C | 150°C | 22K |
| 157. | NTE630 | Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 600V. Average rectifier forward current: 8A (per diode), 16A (total device). | NTE | TO220 | 3 | -65°C | 175°C | 18K |
| 158. | NTE6354 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 159. | NTE6356 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 600V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 160. | NTE6358 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1000V. | NTE | - | 2 | -40°C | 180°C | 25K |
| 161. | NTE6362 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1400V. | NTE | - | 2 | -40°C | 180°C | 25K |
