GETDATASHEET.COM - Datasheets search system
HOME  |  DATASHEETS  |  LOGOTYPES |  SEARCH COMPANY |  ABOUT SITE  |  PRODUCERS  | 

We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.) GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide. All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet. Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.

OVER 1.000.000 DATASHEETS (Technical documentation on electronical components)
  Search datasheet:
Example: max232

Searchign results: TE4


Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 170      Displaying: 41 - 60
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
41.
NTE473Silicon NPN transistor. RF power driver.
NTE
TO39
3
-65°C
200°C
23K
42.
NTE475Silicon NPN transistor. RF power output.
NTE
-
3
-65°C
200°C
21K
43.
NTE475Silicon NPN transistor. RF power output.
NTE
-
3
-65°C
200°C
21K
44.
NTE476Silicon NPN transistor. RF power output.
NTE
-
3
-65°C
200°C
22K
45.
NTE477Silicon NPN transistor. RF power output.
NTE
-
4
0°C
175°C
22K
46.
NTE478Silicon NPN transistor. RF power output, Po = 100W @ 175 MHz.
NTE
-
4
0°C
200°C
22K
47.
NTE48Silicon NPN transistor. Darlington, general purpose amplifier, high current.
NTE
-
3
-55°C
150°C
21K
48.
NTE480Silicon NPN transistor. RF power output for broadband amp, Po = 40W @ 512 MHz.
NTE
-
4
0°C
200°C
22K
49.
NTE4828Surge clamping, transient overvoltage suppressor unidirectional. VR = 15.0V max reverse stand off voltage.
NTE
-
2
-55°C
175°C
21K
50.
NTE483Silicon NPN transistor. RF power output for mobile use, Po = 18W @ 866 MHz
NTE
-
4
0°C
200°C
22K
51.
NTE484Silicon NPN transistor. RF power output for mobile use, Po = 25W @ 947MHz
NTE
-
4
0°C
200°C
22K
52.
NTE4840Surge clamping, transient overvoltage suppressor unidirectional. VR = 24.0V max reverse stand off voltage.
NTE
-
2
-55°C
175°C
21K
53.
NTE4846Surge clamping, transient overvoltage suppressor unidirectional. VR = 30.0V max reverse stand off voltage.
NTE
-
2
-55°C
175°C
21K
54.
NTE4848Surge clamping, transient overvoltage suppressor unidirectional. VR = 33.0V max reverse stand off voltage.
NTE
-
2
-55°C
175°C
21K
55.
NTE4850Surge clamping, transient overvoltage suppressor unidirectional. VR = 36.0V max reverse stand off voltage.
NTE
-
2
-55°C
175°C
21K
56.
NTE4858Surge clamping, transient overvoltage suppressor unidirectional. VR = 48.0V max reverse stand off voltage.
NTE
-
2
-55°C
175°C
21K
57.
NTE486Silicon NPN transistor. RF high frequency amplifier.
NTE
TO39
3
-
-
23K
58.
NTE4868Surge clamping, transient overvoltage suppressor unidirectional. VR = 64.0V max reverse stand off voltage.
NTE
-
2
-55°C
175°C
21K
59.
NTE4868Surge clamping, transient overvoltage suppressor unidirectional. VR = 64.0V max reverse stand off voltage.
NTE
-
2
-55°C
175°C
21K
60.
NTE488Silicon NPN transistor. RF power output.
NTE
-
3
0°C
175°C
21K
1 2 3 4 5 6 7 8 9


Main page

 
 Copyright © GetDatasheet.com 2005 - 2025 (Datasheets)   About site | Datasheet support
Valid HTML 4.01 TransitionalValid CSS!