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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | NTE451 | Silicon N-cannel JFET transistor. VNF/UNF amplifier. | NTE | - | 3 | -65°C | 150°C | 23K |
| 22. | NTE452 | Silicon N-cannel JFET transistor. VNF amplifier, mixer. | NTE | TO72 | 4 | -65°C | 175°C | 24K |
| 23. | NTE454 | MOSFET, N-Ch, dual gate, TV UNF/RF amp, gate protected. | NTE | TO72 | 4 | -65°C | 175°C | 26K |
| 24. | NTE457 | Silicon N-channel JFET transistor general purpose amplifier, switch. | NTE | - | 3 | 0°C | 125°C | 20K |
| 25. | NTE458 | N-channel silicon JFET general purpose, low noise, audio frequency amplifier. | NTE | - | 3 | 0°C | 125°C | 21K |
| 26. | NTE459 | N-channel silicon JFET transistor AF amplifier/chopper/switch. | NTE | - | 3 | 0°C | 175°C | 22K |
| 27. | NTE46 | Silicon NPN transistor. Darlington, general purpose amplifier, preamp, driver. | NTE | - | 3 | -55°C | 150°C | 23K |
| 28. | NTE464 | Silicon complementary MOSFET P-ch transistor. Enhancement mode for switching applications. | NTE | - | 4 | 0°C | 175°C | 23K |
| 29. | NTE465 | Silicon complementary MOSFET N-ch transistor. Enhancement mode for switching applications. | NTE | - | 4 | 0°C | 175°C | 23K |
| 30. | NTE466 | Silicon N-channel JFET transistor. Chopper, high speed switch. | NTE | - | 3 | - | - | 21K |
| 31. | NTE467 | Silicon N-channel JFET transistor. Chopper, high speed switch. | NTE | - | 3 | -65°C | 150°C | 20K |
| 32. | NTE467 | Silicon N-channel JFET transistor. Chopper, high speed switch. | NTE | - | 3 | -65°C | 150°C | 20K |
| 33. | NTE468 | Silicon N-channel JFET transistor. Chopper, high speed switch. | NTE | - | 3 | -55°C | 150°C | 21K |
| 34. | NTE469 | Silicon N-channel JFET transistor. Chopper, high speed switch. | NTE | - | 3 | -55°C | 150°C | 21K |
| 35. | NTE47 | Silicon NPN transistor. High gain, low noise amp. | NTE | - | 3 | -55°C | 150°C | 22K |
| 36. | NTE470 | Silicon NPN transistor. RF power output. | NTE | W52 | 4 | - | - | 24K |
| 37. | NTE470 | Silicon NPN transistor. RF power output. | NTE | W52 | 4 | - | - | 24K |
| 38. | NTE471 | Silicon NPN transistor. RF power output, Po = 100W @ 30MHz. | NTE | - | 4 | 0°C | 200°C | 23K |
| 39. | NTE472 | Silicon NPN transistor. RF power output, Po = 1.8W @ 175MHz. | NTE | - | 3 | - | - | 21K |
| 40. | TE4933 | 50 V, 1 A, glass passivated junction fast switching rectifier | TRSYS | - | 2 | -55°C | 150°C | 165K |
