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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | NTE12 | Silicon complementary transistor PNP. High current amplifier. | NTE | - | 3 | 0°C | 150°C | 22K |
| 22. | NTE1200 | Integrated circuit. Color TV chroma processor. | NTE | - | 16 | - | - | 24K |
| 23. | NTE1206 | Integrated circuit. Phase lock loop (PLL) stereo decoder. | NTE | - | 14 | -25°C | 75°C | 23K |
| 24. | NTE1208 | Integrated circuit. CMOS, phase comparator. | NTE | SIP | 9 | -30°C | 75°C | 19K |
| 25. | NTE121 | Germanium PNP transistor. Audio frequency power amplifier. | NTE | TO | 3 | 0°C | 100°C | 20K |
| 26. | NTE1210 | Integrated circuit. Preamp w/ALC. | NTE | SIP | 9 | -20°C | 75°C | 20K |
| 27. | NTE1214 | Integrated circuit. AM tuner system. | NTE | DIP | 16 | -20°C | 70°C | 22K |
| 28. | NTE1217 | Integrated circuit. Phase lock loop (PLL) FM multiplex stereo demodulator. | NTE | DIP | 16 | -20°C | 70°C | 21K |
| 29. | VTE1262 | GaAlAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 40K |
| 30. | VTE1281-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 31. | VTE1281-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 32. | VTE1281F | GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 24K |
| 33. | VTE1281W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 34. | VTE1281W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 35. | VTE1285 | GaAlAs infrared emitting diode. Irradiance(typ) 5.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 27K |
| 36. | VTE1291-1 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 37. | VTE1291-2 | GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 32K |
| 38. | VTE1291W-1 | GaAlAs infrared emitting diode. Irradiance(typ) 1.6 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 33K |
| 39. | VTE1291W-2 | GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 33K |
| 40. | VTE1295 | GaAlAs infrared emitting diode. Irradiance(typ) 5.5 mW/cm2 (distance 36 mm, diameter 6.4 mm). | PERK | T-1.75 | 2 | -40°C | 100°C | 27K |
