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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | FTD2005 | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO | - | - | - | - | 33K |
| 42. | FTD2007 | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications | SANYO | - | - | - | - | 34K |
| 43. | FTD2011 | N-Channel Silicon MOSFET Load Switching Applications | SANYO | - | - | - | - | 69K |
| 44. | FTD2011 | N-Channel Silicon MOSFET Load Switching Applications | SANYO | - | - | - | - | 69K |
| 45. | FTD2013 | N-Channel Silicon MOSFET Load Switching Applications | SANYO | - | - | - | - | 76K |
| 46. | FTD2014 | N-Channel Silicon MOSFET Load Switching Applications | SANYO | - | - | - | - | 41K |
| 47. | FTD2015 | N-Channel Silicon MOSFET Load Switching Applications | SANYO | - | - | - | - | 41K |
| 48. | FTD2017 | N-Channel Silicon MOSFET Load Switching Applications | SANYO | - | - | - | - | 42K |
| 49. | FTD2019 | N-Channel Silicon MOSFET Load Switching Applications | SANYO | - | - | - | - | 42K |
| 50. | FTD2022 | N-Channel Silicon MOSFET Load Switching Applications | SANYO | - | - | - | - | 41K |
| 51. | MTD20N03HDL | HDTMOS E-FET high density power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 250K |
| 52. | MTD20N06HD | HDTMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 274K |
| 53. | MTD20N06HDL | HDTMOS E-FET high density power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 293K |
| 54. | STD20N03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | STM | TO-252 | - | - | - | 105K |
| 55. | STD20N06 | TRANSISTOR MOSFET TO-252 | STM | - | - | - | - | 174K |
| 56. | TD28F010 | 1024K (128K x 8) CMOS FLASH memory | INTEL | CERDIP | 32 | -40°C | 110°C | 317K |
| 57. | VTD205 | Alternate source/second source photodiode. Isc = 25 microA, Voc = 350 mV at 940 nm, H = 0.5 mW/cm2. | PERK | - | 2 | -40°C | 100°C | 21K |
| 58. | VTD205K | Alternate source/second source photodiode. Isc = 80 microA at 1000 lux, 2850 K. Voc = 365 mV at 940 nm, H = 0.5 mW/cm2. | PERK | - | 2 | -40°C | 100°C | 21K |
| 59. | VTD206 | Alternate source/second source photodiode. Isc = 25 microA, Voc = 350 mV at 940 nm, H = 0.5 mW/cm2. | PERK | - | 2 | -40°C | 100°C | 26K |
| 60. | VTD206K | Alternate source/second source photodiode. Isc = 80 microA at 1000 lux, 2856 K. Voc = 350 mV at 940 nm, H = 0.5 mW/cm2. | PERK | - | 2 | -40°C | 100°C | 26K |
