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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | 28C256ATC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 41K |
| 162. | 28C256ATC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 41K |
| 163. | 28C64ATC-1 | High speed 120 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 42K |
| 164. | 28C64ATC-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 42K |
| 165. | 29C010TC-1 | High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM | TRBIC | TSOP | 32 | 0°C | 70°C | 52K |
| 166. | 29C010TC-1 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. | TURBO | TSOP | 32 | 0°C | 70°C | 52K |
| 167. | 29C021TC-1 | High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM | TRBIC | TSOP | 32 | 0°C | 70°C | 54K |
| 168. | 29C021TC-1 | High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. | TURBO | TSOP | 32 | 0°C | 70°C | 54K |
| 169. | 29C512TC-1 | High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 64K x 8 BIT flash PEROM | TRBIC | TSOP | 32 | 0°C | 70°C | 56K |
| 170. | HY57V651620BLTC-10 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
| 171. | HY57V651620BLTC-10P | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
| 172. | HY57V651620BLTC-10S | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz, low power | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
| 173. | HY57V651620BTC-10 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
| 174. | HY57V651620BTC-10P | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
| 175. | HY57V651620BTC-10S | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 100MHz | HYNIX | TSOP II | 54 | 0°C | 70°C | 81K |
| 176. | MX28F1000PTC-12C4 | 1M-bit (128K x 8) CMOS flash memory | MCNIX | TSOP | 32 | -40°C | 85°C | 127K |
| 177. | MX28F2000PTC-12C4 | 2M-BIT (256K x 8) CMOS flash memory, 120ns | MCNIX | TSOP | 32 | 0°C | 70°C | 191K |
| 178. | MX28F2100BTC-12 | 2M-BIT (256K x 8/128K x 16 switchable) CMOS flash memory, 120ns | MCNIX | TSOP | 48 | 0°C | 70°C | 283K |
| 179. | MX29L1611TC-10 | Access time: 100ns; 16M-bit (2M x 8/1M x 16) CMOS single voltage pagemode flash EEPROM | MCNIX | TSOP | 48 | 0°C | 70°C | 659K |
| 180. | MX29L3211TC-10 | Access time: 100ns; 32M-bit (4M x 8/2M x 16) CMOS single voltage pagemode flash EEPROM | MCNIX | TSOP | 48 | 0°C | 70°C | 659K |
