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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 181. | AT5558D | Dual operational amplifier for audio | AIM | DIP | 14 | 0°C | 85°C | 361K |
| 182. | AT5558S | Dual operational amplifier for audio | AIM | SOP | 14 | 0°C | 85°C | 361K |
| 183. | FMMT558 | PNP silicon planar high voltage transistor | ZETEX | SOT | 3 | -55°C | 150°C | 122K |
| 184. | FMMT558 | PNP silicon planar high voltage transistor | ZETEX | SOT | 3 | -55°C | 150°C | 122K |
| 185. | FZT558 | PNP silicon planar medium power high voltage transistor | ZETEX | SOT | 3 | -55°C | 150°C | 110K |
| 186. | G950T55D | 2.5 V, 1A regulator | GMT | TO263 | 3 | -40°C | 85°C | 207K |
| 187. | G950T55T | 2.5 V, 1A regulator | GMT | TO263 | 3 | -40°C | 85°C | 207K |
| 188. | G950T55U | 2.5 V, 1A regulator | GMT | TO263 | 3 | -40°C | 85°C | 207K |
| 189. | HMBT5551 | Emitter to base voltage:6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage | HSMC | SOT-23 | 3 | - | - | 31K |
| 190. | MMBT5550 | 140 V, high voltage transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 84K |
| 191. | MMBT5550 | 140 V, high voltage transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 84K |
| 192. | MMBT5550LT1 | 140 V, high voltage transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 165K |
| 193. | MMBT5551 | 180V; 200mA NPN small signal surface mount transistor. Ideal for medium power application and switching | DIODS | SOT-23 | 3 | -55°C | 150°C | 47K |
| 194. | MMBT5551 | 180 V, NPN small signal surface mount transistor | TRSYS | SOT-23 | 3 | -55°C | 150°C | 170K |
| 195. | MMBT5551 | 140 V, high voltage transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 84K |
| 196. | MMBT5551 | 140 V, high voltage transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 84K |
| 197. | MMBT5551LT1 | 140 V, high voltage transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 165K |
| 198. | MMDT5551 | 180V; 200mA dual NPN small signal surface mount transistor. Ideal for medium power amplification and switching | DIODS | SOT-363 | 6 | -55°C | 150°C | 41K |
| 199. | MMST5551 | 180V; 200mA NPN small signal surface mount transistor. Ideal for medium power amplification and switching | DIODS | SOT-363 | 6 | -55°C | 150°C | 41K |
| 200. | ST62T55CN6 | Bits number of 8 Memory type OTP PROM Microprocessor/controller features LVD/RC/OSG/READOUT PROTN./DIRECT LED/TRIAC DRIVE/SPI Frequency clock 8 MHz Memory size 4 K-bit Temperature operating min -40 | STM | SSOP | - | -40°C | 85°C | 564K |
