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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 221. | 3T350A | 300V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor | MDE | SMD | 2 | - | - | 1M |
| 222. | 3T350B | 300V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor | MDE | SMD | 2 | - | - | 1M |
| 223. | 74HC/HCT354 | 8-input multiplexer/register | PHLPS | DIP | 20 | -40°C | 85°C | 82K |
| 224. | 74HC/HCT356 | 8-input multiplexer/register | PHLPS | DIP | 20 | -40°C | 85°C | 79K |
| 225. | AP1117T35A | 3.5V 1A positive low dropout regulator | ATC | TO-220 | 3 | 0°C | 70°C | 186K |
| 226. | CT35SM-8 | 400V, 200A strobe flash IGBT | PWRX | TO-3P | - | - | - | 33K |
| 227. | IXGT35N120C | 1200V IGBT | IXYS | TO-268 | 3 | -55°C | 150°C | 53K |
| 228. | IXST35N120B | 1200V IGBT | IXYS | TO-268 | 3 | -55°C | 150°C | 82K |
| 229. | T35L3232B-3.8Q | 0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode | TMT | QFP | 100 | 0°C | 70°C | 261K |
| 230. | T35L3232B-3.8Q | 0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode | TMT | QFP | 100 | 0°C | 70°C | 261K |
| 231. | T35L3232B-4T | 0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode | TMT | TQFP | 100 | 0°C | 70°C | 261K |
| 232. | T35L3232B-4T | 0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode | TMT | TQFP | 100 | 0°C | 70°C | 261K |
| 233. | T35L6432B-10Q | 0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter | TMT | QFP | 100 | 0°C | 70°C | 162K |
| 234. | T35L6432B-10Q | 0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter | TMT | QFP | 100 | 0°C | 70°C | 162K |
| 235. | V53C16256HT35I | 256K x 16bit fast page mode CMOS dynamic RAM | MOSEL | TSOP | 44 | -40°C | 85°C | 146K |
| 236. | V53C16256HT35I | 256K x 16bit fast page mode CMOS dynamic RAM | MOSEL | TSOP | 40 | -40°C | 85°C | 146K |
| 237. | V53C16258HT35I | High performance 256K x 16 EDO page mode CMOS DRAM no self refresh, 35ns | MOSEL | TSOP II | 40 | -40°C | 85°C | 556K |
| 238. | V53C16258SHT35I | High performance 256K x 16 EDO page mode CMOS dynamic RAM with optional self refresh | MOSEL | TSOP | 40 | -40°C | 85°C | 556K |
| 239. | V53C16258SHT35I | High performance 256K x 16 EDO page mode CMOS dynamic RAM with optional self refresh | MOSEL | TSOP | 44 | -40°C | 85°C | 556K |
| 240. | V53C16258SHT35I | High performance 256K x 16 EDO page mode CMOS DRAM optional self refresh, 35ns | MOSEL | TSOP II | 40 | -40°C | 85°C | 556K |
