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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 321. | CET3055 | N-channel enhancement mode field effect transistor | CETSE | SOT-223 | 3 | -65°C | 150°C | 487K |
| 322. | CET3055L | N-channel enhancement mode field effect transistor | CETSE | SOT-223 | 3 | -65°C | 150°C | 494K |
| 323. | CT30SM-12 | 30A insulated gate bipolar transistor for general inverter ups use | MITS | TO-3P | 4 | -40°C | 150°C | 36K |
| 324. | CT30TM-8 | 180A insulated gate bipolar transistor for strobe flasher use | MITS | TO-220F | 3 | -40°C | 150°C | 25K |
| 325. | CT30VM-8 | 180A insulated gate bipolar transistor for strobe flasher use | MITS | TO-220C | 4 | -40°C | 150°C | 24K |
| 326. | MMFT3055E | Medium power field effect transistor | MOT | TO-261AA | 4 | -65°C | 150°C | 238K |
| 327. | MMFT3055EL | Medium power field effect transistor | MOT | TO-261AA | 4 | -65°C | 150°C | 236K |
| 328. | MMFT3055V | SOT-223 for surface mount | MOT | TO-261AA | 4 | -55°C | 150°C | 91K |
| 329. | MMFT3055VL | SOT-223 for surface mount | MOT | TO-261AA | 4 | -55°C | 150°C | 224K |
| 330. | RE5VT30AA-RF | Low voltage detector. Detector threshold 3.0V. Output type Nch open drain. Taping type RF | RICOH | - | 3 | -30°C | 80°C | 324K |
| 331. | RE5VT30AA-RR | Low voltage detector. Detector threshold 3.0V. Output type Nch open drain. Taping type RR | RICOH | - | 3 | -30°C | 80°C | 324K |
| 332. | RE5VT30AA-TZ | Low voltage detector. Detector threshold 3.0V. Output type Nch open drain. Standard taping type TZ | RICOH | - | 3 | -30°C | 80°C | 324K |
| 333. | UFT30-28 | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 19K |
| 334. | UFT30-28S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 16K |
| 335. | UT3020 | Standard Rectifier (trr more than 500ns) | MSEMI | B_(WT) | - | - | - | 139K |
| 336. | UT3040 | Standard Rectifier (trr more than 500ns) | MSEMI | B_(WT) | - | - | - | 139K |
| 337. | UT3060 | Standard Rectifier (trr more than 500ns) | MSEMI | B_(WT) | - | - | - | 139K |
| 338. | VFT30-50 | VHF power MOSFET N-channel enhancement mode | ADVAN | - | 4 | -65°C | 200°C | 18K |
| 339. | VFT300-28 | VHF power MOSFET N-channel enhancement mode | ADVAN | - | 4 | -65°C | 200°C | 24K |
| 340. | VFT300-50 | VHF power MOSFET N-channel enhancement mode | ADVAN | - | 4 | -65°C | 200°C | 20K |
