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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 528 Displaying: 381 - 400| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 381. | GS71024T-10 | 10ns 64K x 24 1.5Mb asynchronous SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 260K | | 382. | GS71024T-10I | 10ns 64K x 24 1.5Mb asynchronous SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 260K | | 383. | GS72116AT-10 | 10ns 128K x 16 2Mb asynchronous SRAM | GSITE | TQFP | 44 | 0°C | 70°C | 505K | | 384. | GS72116AT-10I | 10ns 128K x 16 2Mb asynchronous SRAM | GSITE | TQFP | 44 | -40°C | 85°C | 505K | | 385. | GS72116T-10 | 10ns 128K x 16 2Mb asynchronous SRAM | GSITE | TQFP | 44 | 0°C | 70°C | 269K | | 386. | GS72116T-10I | 10ns 128K x 16 2Mb asynchronous SRAM | GSITE | TQFP | 44 | -40°C | 85°C | 269K | | 387. | GS72116T-10I | 10ns 128K x 16 2Mb asynchronous SRAM | GSITE | TQFP | 44 | -40°C | 85°C | 269K | | 388. | GS84018T-100 | 100MHz 12ns 256K x 18 4Mb sync NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 627K | | 389. | GS84018T-100I | 100MHz 12ns 256K x 18 4Mb sync NBT SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 627K | | 390. | GS84032T-100 | 100MHz 12ns 128K x 32 4Mb sync NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 627K | | 391. | GS84032T-100 | 100MHz 12ns 128K x 32 4Mb sync NBT SRAM | GSITE | TQFP | 100 | 0°C | 70°C | 627K | | 392. | GS84032T-100I | 100MHz 12ns 128K x 32 4Mb sync NBT SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 627K | | 393. | HM62V256LT-10 | 32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns | HIT | TSOP | 32 | 0°C | 70°C | 111K | | 394. | M2S56D20AKT-10 | 265M double data rate SDRAM, 64M x 4 organization, 10ns, Vcc=2.3-2.7 | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 395. | M2S56D20AKT-10L | 265M double data rate SDRAM, 64M x 4 organization, 10ns, Vcc=2.3-2.7, low power | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 396. | M2S56D30AKT-10 | 265M double data rate SDRAM, 32M x 8 organization, 10ns, Vcc=2.3-2.7 | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 397. | M2S56D30AKT-10L | 265M double data rate SDRAM, 32M x 8 organization, 10ns, Vcc=2.3-2.7, low power | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 398. | M2S56D40AKT-10 | 265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7 | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 399. | M2S56D40AKT-10L | 265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7, low power | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 400. | PEEL18CV8T-10 | 10ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 20 | 0°C | 70°C | 397K | | 401. | PEEL22CV10AT-10 | 10ns CMOS programmable electrically erasable logic device | ICT | TSSOP | 20 | 0°C | 70°C | 247K |
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