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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 201. | IS61SP12832-117B | 117MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM | ICSI | PBGA | 100 | 0°C | 70°C | 490K |
| 202. | IS61SP12832-133B | 133MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM | ICSI | PBGA | 100 | 0°C | 70°C | 490K |
| 203. | IS61SP12832-133TQ | 133MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM | ICSI | LQFP | 100 | 0°C | 70°C | 490K |
| 204. | IS61SP12832-150B | 150MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM | ICSI | PBGA | 100 | 0°C | 70°C | 490K |
| 205. | IS61SP12832-150TQ | 150MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM | ICSI | LQFP | 100 | 0°C | 70°C | 490K |
| 206. | IS61SP12832-166B | 166MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM | ICSI | PBGA | 100 | 0°C | 70°C | 490K |
| 207. | IS61SP12832-166TQ | 166MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM | ICSI | LQFP | 100 | 0°C | 70°C | 490K |
| 208. | KSP10 | NPN VHF/UHF transistor, collector-emitter=25V, collector power dissipation=1.0 W | FAIR | - | 3 | -55°C | 150°C | 51K |
| 209. | KSP13 | Darlington transistor, collector-emitter voltage =30V, collector power dissipation =625mW | FAIR | - | 3 | -55°C | 150°C | 33K |
| 210. | KSP14 | Darlington transistor, collector-emitter voltage =30V, collector power dissipation =625mW | FAIR | - | 3 | -55°C | 150°C | 33K |
| 211. | SSP1N50B | 520V, 1.5A N-channel MOSFET | FAIR | TO-220 | 3 | -55°C | 150°C | 629K |
| 212. | SSP1N60B | 600V, 1A N-channel MOSFET | FAIR | TO-220 | 3 | -55°C | 150°C | 852K |
| 213. | SSP1N60B | 600V, 1A N-channel MOSFET | FAIR | TO-220 | 3 | -55°C | 150°C | 852K |
| 214. | TSP140C | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 140V. Breakover voltage 180V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-214AA | 2 | -40°C | 65°C | 110K |
| 215. | TSP160A | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 160V. Breakover voltage 220V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-15 | 2 | -40°C | 65°C | 87K |
| 216. | TSP160C | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 160V. Breakover voltage 220V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-214AA | 2 | -40°C | 65°C | 110K |
| 217. | TSP190C | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 190V. Breakover voltage 260V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-214AA | 2 | -40°C | 65°C | 110K |
| 218. | USP10 | VHF/UHF Transistor. Vcbo = 30V, Vceo = 25V, Vebo = 3.0V Pc = 350mW | USHA | TO92 | 3 | 0°C | 150°C | 46K |
| 219. | USP11 | VHF/UHF Transistor. Vcbo = 30V, Vceo = 25V, Vebo = 3.0V Pc = 350mW | USHA | - | 3 | 0°C | 150°C | 45K |
| 220. | USP17 | CATV Transistor. Vcbo = 20V, Vceo = 15V, Vebo = 3.0V Pc = 625mW | USHA | - | 3 | 0°C | 150°C | 67K |
