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Found: 54      Displaying: 41 - 54
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
41.
2SC2001Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 700mA.
USHA
-
3
0°C
150°C
45K
42.
2SC2021NPN transistor for general small signal amplifier, 40V 0.1A
ROHM
FTR
3
-55°C
125°C
309K
43.
2SC2056NPN epitaxial planar type
MITS
T-8E
3
-
-
179K
44.
2SC2063NPN transistor for RF amplifier, 25V 50mA
ROHM
FTR
3
-55°C
125°C
309K
45.
2SC2086NPN epitaxial planar type
MITS
TO-92L
3
-
-
126K
46.
2SC2094NPN epitaxial planar type
MITS
T-31E
5
-
-
149K
47.
2SC2097NPN epitaxial planar type
MITS
T-40E
5
-
-
134K
48.
KSC2001NPN Epitaxial Silicon Transistor
FAIR
-
-
-
-
25K
49.
KSC2073NPN Epitaxial Silicon Transistor
FAIR
-
-
-
-
56K
50.
SC20005 V, universal timeslot interchange
PHLPS
PLCC
68
0°C
70°C
221K
51.
SC2092-400-15400 V, 2 A, silicon controlled rectifier
TEL
-
3
-40°C
110°C
507K
52.
SC2092-400-15400 V, 2 A, silicon controlled rectifier
TRSYS
-
3
-40°C
110°C
507K
53.
SC2092-600-15600 V, 2 A, silicon controlled rectifier
TEL
-
3
-40°C
110°C
507K
54.
SC2092-600-15600 V, 2 A, silicon controlled rectifier
TRSYS
-
3
-40°C
110°C
507K
1 2 3


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