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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 301. | KSA708 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 39K |
| 302. | KSA733 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 41K |
| 303. | MPSA77 | Darlington Transistor | KEC | - | - | - | - | 65K |
| 304. | SA7.5A | 7.50V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 305. | SA70 | 70.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 306. | SA7016 | 1.3GHz low voltage fractional-N synthesizer. | PHLPS | SOT403-1 | 16 | -40°C | 85°C | 170K |
| 307. | SA7016 | 1.3GHz low voltage fractional-N synthesizer. | PHLPS | TSSOP | 16 | -40°C | 85°C | 170K |
| 308. | SA701D | Advanced dual modolus (divide by 128/129 or 64/65) low power ECL prescaler. | PHLPS | SO | 8 | -40°C | 85°C | 130K |
| 309. | SA701N | Advanced dual modolus (divide by 128/129 or 64/65) low power ECL prescaler. | PHLPS | DIP | 8 | -40°C | 85°C | 130K |
| 310. | SA7025DK | 1GHz low-voltage fractional-N synthesizer. | PHLPS | SOT266-1 | 20 | -40°C | 85°C | 306K |
| 311. | SA7025DK | 1GHz low-voltage fractional-N synthesizer. | PHLPS | SSOP | 20 | -40°C | 85°C | 306K |
| 312. | SA7026DH | 1.3GHz low voltage fractional-N dual frequency synthesizer. | PHLPS | SOT360-1 | 20 | -40°C | 85°C | 221K |
| 313. | SA7026DH | 1.3GHz low voltage fractional-N dual frequency synthesizer. | PHLPS | TSSOP | 20 | -40°C | 85°C | 221K |
| 314. | SA702D | Divide by: 64/65/72 triple modulus low power ECL prescaler. | PHLPS | SO | 8 | -40°C | 85°C | 81K |
| 315. | SA702N | Divide by: 64/65/72 triple modulus low power ECL prescaler. | PHLPS | DIP | 8 | -40°C | 85°C | 81K |
| 316. | SA70A | 70.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 317. | SA75 | 75.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 318. | SA75A | 75.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 319. | SA78 | 78.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 320. | SA78A | 78.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
