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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 641. | 2SA2011 | PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications | SANYO | - | - | - | - | 50K |
| 642. | 2SA2012 | PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications | SANYO | - | - | - | - | 49K |
| 643. | 2SA2013 | PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications | SANYO | - | - | - | - | 50K |
| 644. | 2SA2037 | PNP transistor for DC / DC converter applications, 50V, 6A | SANYO | TO-126ML | 3 | -55°C | 150°C | 37K |
| 645. | DSA26G | Diffused Junction Type Silicon Diode 2.6A Power Rectifier | SANYO | - | - | - | - | 18K |
| 646. | HSA2929 | 3.3 V, customer specific, differential positive ECL crystal clock oscillator | NELFC | SMD | 14 | - | - | 364K |
| 647. | KSA2690 | NPN audio frequency power amplifier transistor | FAIR | TO-126 | 3 | -55°C | 150°C | 50K |
| 648. | KSA2690A | NPN high frequency power amplifier transistor | FAIR | TO-126 | 3 | -55°C | 150°C | 50K |
| 649. | SA20 | 20.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 650. | SA20A | 20.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 651. | SA22A | 22.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 652. | SA24 | 24.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 653. | SA2410 | 2.45 GHz RF power amplifier and T/R switch | PHLPS | LQFP | 32 | -40°C | 85°C | 45K |
| 654. | SA2420DH | 2.45 GHz, low voltage RF transceiver | PHLPS | TSSOP | 24 | -40°C | 85°C | 148K |
| 655. | SA2421DH | 2.45 GHz, low voltage RF transceiver | PHLPS | TSSOP | 24 | -40°C | 85°C | 109K |
| 656. | SA24A | 24.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 657. | SA26 | 26.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 658. | SA26A | 26.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 659. | SA28 | 28.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
| 660. | SA28A | 28.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications | MDE | DO-15 | 2 | -55°C | 175°C | 601K |
