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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 305 Displaying: 261 - 280| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 261. | 23S560 | Bobbin wound surface mount inductor (EMI shielded type). Nominal inductance (1kHz, 100mV AC) 56uH | CANDD | - | - | -40°C | 85°C | 51K | | 262. | 74ALS563AD | 5.5 V, latch/flip-flop | PHLPS | SOL | 20 | 0°C | 70°C | 106K | | 263. | 74ALS564AD | 5.5 V, latch/flip-flop | PHLPS | SOL | 20 | 0°C | 70°C | 106K | | 264. | 74ALS564AN | 5.5 V, latch/flip-flop | PHLPS | DIP | 20 | 0°C | 70°C | 106K | | 265. | GNR34S561K | Varistor. Max allowable voltage: ACrms=350V, DC=460V. Varistor voltage 504-616V. | CRMT | - | 2 | -40°C | 85°C | 68K | | 266. | K4S560832C-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | SMSNG | TSOP | 54 | 0°C | 70°C | 113K | | 267. | M2S56D30AKT-10L | 265M double data rate SDRAM, 32M x 8 organization, 10ns, Vcc=2.3-2.7, low power | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 268. | M2S56D40AKT-75 | 265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7 | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 269. | M2S56D40AKT-75A | 265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7 | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 270. | M2S56D40AKT-75AL | 265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low power | MITS | sTSOP | 64 | 0°C | 70°C | 768K | | 271. | M2S56D40ATP-10 | 265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7 | MITS | TSOP II | 66 | 0°C | 70°C | 768K | | 272. | M2S56D40ATP-10L | 265M double data rate SDRAM, 16M x 16 organization, 10ns, Vcc=2.3-2.7, low power | MITS | TSOP II | 66 | 0°C | 70°C | 768K | | 273. | M2S56D40ATP-75 | 265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7 | MITS | TSOP II | 66 | 0°C | 70°C | 768K | | 274. | M2S56D40ATP-75A | 265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low power | MITS | TSOP II | 66 | 0°C | 70°C | 768K | | 275. | M2S56D40ATP-75AL | 265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low power | MITS | TSOP II | 66 | 0°C | 70°C | 768K | | 276. | M2S56D40ATP-75L | 265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low power | MITS | TSOP II | 66 | 0°C | 70°C | 768K | | 277. | M2S56D40ATP-75L | 265M double data rate SDRAM, 16M x 16 organization, 7.5ns, Vcc=2.3-2.7, low power | MITS | TSOP II | 66 | 0°C | 70°C | 768K | | 278. | M93S56-R | 4KBIT, 2KBIT AND 1KBIT (X16) SERIAL MICROWIRE BUS EEPROM WITH BLOCK PROTECTION | STM | - | - | - | - | 211K | | 279. | MDE-25S561K | 560V; max peak current:20000A; metal oxide varistor. Standard S series 25mm disc | MDE | - | 2 | - | - | 87K | | 280. | MDE-34S561K | 560V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | MDE | - | 2 | - | - | 88K |
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