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Found: 236      Displaying: 181 - 200
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
181.
74ALS00AN5.5 V, quad 2-input NAND gate
PHLPS
DIP
14
0°C
70°C
92K
182.
R7S00216200V, 1600A general purpose single diode
PWRX
-
-
-
-
435K
183.
R7S00408400V, 800A general purpose single diode
PWRX
-
-
-
-
445K
184.
R7S00416400V, 1600A general purpose single diode
PWRX
-
-
-
-
435K
185.
R7S00416400V, 1600A general purpose single diode
PWRX
-
-
-
-
435K
186.
R7S00608600V, 800A general purpose single diode
PWRX
-
-
-
-
445K
187.
R7S00612600V, 1200A general purpose single diode
PWRX
-
-
-
-
427K
188.
R7S00616600V, 1600A general purpose single diode
PWRX
-
-
-
-
435K
189.
R7S00808800V, 800A general purpose single diode
PWRX
-
-
-
-
445K
190.
R7S00812800V, 1200A general purpose single diode
PWRX
-
-
-
-
427K
191.
R7S00816800V, 1600A general purpose single diode
PWRX
-
-
-
-
435K
192.
T7S0026504DN200V, 650A phase control single thyristor
PWRX
-
-
-
-
641K
193.
T7S0027504DN200V, 750A phase control single thyristor
PWRX
-
-
-
-
629K
194.
T7S0046504DN400V, 650A phase control single thyristor
PWRX
-
-
-
-
641K
195.
T7S0047504DN400V, 750A phase control single thyristor
PWRX
-
-
-
-
629K
196.
T7S0066504DN600V, 650A phase control single thyristor
PWRX
-
-
-
-
641K
197.
T7S0067504DN600V, 750A phase control single thyristor
PWRX
-
-
-
-
629K
198.
T7S0087504DN800V, 750A phase control single thyristor
PWRX
-
-
-
-
629K
199.
W4NXD8C-S000Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE
-
-
-
-
279K
200.
W4NXD8D-S000Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE
-
-
-
-
279K
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