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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | FARM1C11 | 500/750W; inputV:90-132V; outputV:250-370V; 30A; FARM: filter/autoranging rectifier module | VICOR | Mini sized | - | -20°C | 100°C | 314K |
| 62. | FARM1C12 | 500/750W; inputV:90-132V; outputV:250-370V; 30A; FARM: filter/autoranging rectifier module | VICOR | Mini sized | - | -20°C | 100°C | 314K |
| 63. | FARM1C13 | 500/750W; inputV:90-132V; outputV:250-370V; 30A; FARM: filter/autoranging rectifier module | VICOR | Mini sized | - | -20°C | 100°C | 314K |
| 64. | FARM1C23 | 500/750W; inputV:90-132V; outputV:250-370V; 30A; FARM: filter/autoranging rectifier module | VICOR | Mini sized | - | -20°C | 100°C | 314K |
| 65. | RM10 | 400 V, 1.2 A, silicon rectifier diode | EIC | D2 | 2 | -65°C | 175°C | 39K |
| 66. | RM100C1A-XXF | 100A - transistor module for high speed switching use, insulated type | MITS | - | 3 | -40°C | 150°C | 48K |
| 67. | RM100CA-XXF | 100A - transistor module for high speed switching use, insulated type | MITS | - | 3 | -40°C | 150°C | 48K |
| 68. | RM100HA-XXF | 100A - transistor module for high speed switching use, insulated type | MITS | - | 2 | -40°C | 150°C | 47K |
| 69. | RM100SZ-6R | 100A - transistor module for medium power general use, non-insulated type | MITS | - | 4 | -40°C | 150°C | 43K |
| 70. | RM100SZ-6S | 100A - transistor module for medium power general use, non-insulated type | MITS | - | 4 | -40°C | 150°C | 43K |
| 71. | RM10A | 600 V, 1.2 A, silicon rectifier diode | EIC | D2 | 2 | -65°C | 175°C | 39K |
| 72. | RM10B | 800 V, 1.2 A, silicon rectifier diode | EIC | D2 | 2 | -65°C | 175°C | 39K |
| 73. | RM10TN-2H | 1600V, 7A general purpose 3-phase bridge diode | PWRX | - | - | - | - | 34K |
| 74. | RM10TN-H | 800V, 12A general purpose 3-phase bridge diode | PWRX | - | - | - | - | 34K |
| 75. | RM10Z | 200 V, 1.5 A, silicon rectifier diode | EIC | D2 | 2 | -65°C | 175°C | 39K |
| 76. | RM11A | 600 V, 1.2 A, silicon rectifier diode | EIC | D2 | 2 | -65°C | 175°C | 39K |
| 77. | RM11B | 800 V, 1.2 A, silicon rectifier diode | EIC | D2 | 2 | -65°C | 175°C | 39K |
| 78. | RM11C | 1000 V, 1.2 A, silicon rectifier diode | EIC | D2 | 2 | -65°C | 175°C | 39K |
| 79. | RM15TA-2H | 30A - transistor module for medium power general use, insulated type | MITS | - | 5 | -40°C | 150°C | 45K |
| 80. | RM15TC-40 | 30A - transistor module for high voltage medium power general use, insulated type | MITS | - | 5 | -40°C | 150°C | 47K |
