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Found: 245      Displaying: 121 - 140
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
121.
IRG4PH50SInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A
IRF
TO-247AC
3
-55°C
150°C
130K
122.
IRG4PH50UInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A
IRF
TO-247AC
3
-55°C
150°C
134K
123.
IRG4PH50UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A
IRF
TO-247AC
3
-55°C
150°C
229K
124.
IRG4PSC71KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A
IRF
SUPER-247
3
-55°C
150°C
152K
125.
IRG4PSC71KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A
IRF
SUPER-247
3
-55°C
150°C
196K
126.
IRG4PSC71UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A
IRF
SUPER-247
3
-55°C
150°C
151K
127.
IRG4PSC71UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.67V @ VGE = 15V, IC = 60A
IRF
SUPER-247
3
-55°C
150°C
253K
128.
IRG4PSH71KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A
IRF
SUPER-247
3
-55°C
150°C
200K
129.
IRG4RC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
D-PAK
3
-55°C
150°C
134K
130.
IRG4RC10KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
TO-252AA
3
-55°C
150°C
134K
131.
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
TO-252AA
3
-55°C
150°C
190K
132.
IRG4RC10KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRF
D-PAK
3
-55°C
150°C
190K
133.
IRG4RC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
TO-252AA
3
-55°C
150°C
120K
134.
IRG4RC10SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
D-PAK
3
-55°C
150°C
120K
135.
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
D-PAK
3
-55°C
150°C
189K
136.
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
TO-252AA
3
-55°C
150°C
189K
137.
IRG4RC10SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
IRF
TO-252AA
3
-55°C
150°C
189K
138.
IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A
IRF
D-PAK
3
-55°C
150°C
131K
139.
IRG4RC10UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A
IRF
TO-252AA
3
-55°C
150°C
131K
140.
IRG4RC10UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns.
IRF
TO-252AA
3
-55°C
150°C
191K
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