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Found: 245      Displaying: 81 - 100
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
81.
IRG4BC40Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF
-
3
-55°C
150°C
167K
82.
IRG4BC40KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A
IRF
-
3
-55°C
150°C
156K
83.
IRG4BC40SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A
IRF
-
3
-55°C
150°C
157K
84.
IRG4BC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
IRF
-
3
-55°C
150°C
169K
85.
IRG4BC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
IRF
-
3
-55°C
150°C
169K
86.
IRG4BC40WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.05V @ VGE = 15V, IC = 20A
IRF
-
3
-55°C
150°C
129K
87.
IRG4PC30Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
TO-247AC
3
-55°C
150°C
145K
88.
IRG4PC30FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
TO-247AC
3
-55°C
150°C
210K
89.
IRG4PC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
121K
90.
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
178K
91.
IRG4PC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
TO-247AC
3
-55°C
150°C
178K
92.
IRG4PC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
TO-247AC
3
-55°C
150°C
120K
93.
IRG4PC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
145K
94.
IRG4PC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
211K
95.
IRG4PC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF
TO-247AC
3
-55°C
150°C
123K
96.
IRG4PC40Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
145K
97.
IRG4PC40FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A
IRF
TO-247AC
3
-55°C
150°C
214K
98.
IRG4PC40KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A
IRF
TO-247AC
3
-55°C
150°C
182K
99.
IRG4PC40SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A
IRF
TO-247AC
3
-55°C
150°C
143K
100.
IRG4PC40UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
IRF
TO-247AC
3
-55°C
150°C
148K
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