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Found: 245      Displaying: 61 - 80
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
61.
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
62.
IRG4BC20SDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
-
3
-55°C
150°C
287K
63.
IRG4BC20SD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A
IRF
DDPak
3
-55°C
150°C
382K
64.
IRG4BC20UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
167K
65.
IRG4BC20UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
236K
66.
IRG4BC20WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
IRF
-
3
-55°C
150°C
130K
67.
IRG4BC20W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A
IRF
DDPak
3
-55°C
150°C
152K
68.
IRG4BC30Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
-
3
-55°C
150°C
167K
69.
IRG4BC30FDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRF
-
3
-55°C
150°C
412K
70.
IRG4BC30KInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
-
3
-55°C
150°C
137K
71.
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
DDPak
3
-55°C
150°C
161K
72.
IRG4BC30K-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
DDPak
3
-55°C
150°C
161K
73.
IRG4BC30KDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
-
3
-55°C
150°C
196K
74.
IRG4BC30KD-SInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
IRF
DDPak
3
-55°C
150°C
225K
75.
IRG4BC30SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 18A
IRF
-
3
-55°C
150°C
161K
76.
IRG4BC30UInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
167K
77.
IRG4BC30U-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
DDPak
3
-55°C
150°C
308K
78.
IRG4BC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
234K
79.
IRG4BC30WInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.70V @ VGE = 15V, IC = 12A
IRF
-
3
-55°C
150°C
139K
80.
IRG4BC30W-SInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
IRF
DDPak
3
-55°C
150°C
188K
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