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Found: 245 Displaying: 41 - 60| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 41. | IRG4BC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | - | 3 | -55°C | 150°C | 157K | | 42. | IRG4BC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | - | 3 | -55°C | 150°C | 210K | | 43. | IRG4BC10SD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | TO-262 | 3 | -55°C | 150°C | 217K | | 44. | IRG4BC10SD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | DDPak | 3 | -55°C | 150°C | 217K | | 45. | IRG4BC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | IRF | - | 3 | -55°C | 150°C | 184K | | 46. | IRG4BC15MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5A | IRF | - | 3 | -55°C | 150°C | 256K | | 47. | IRG4BC15UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | IRF | - | 3 | -55°C | 150°C | 255K | | 48. | IRG4BC15UD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | IRF | TO-262 | 3 | -55°C | 150°C | 210K | | 49. | IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | IRF | DDPak | 3 | -55°C | 150°C | 210K | | 50. | IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | IRF | DDPak | 3 | -55°C | 150°C | 210K | | 51. | IRG4BC20 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 161K | | 52. | IRG4BC20FD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 222K | | 53. | IRG4BC20FD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A | IRF | DDPak | 3 | -55°C | 150°C | 222K | | 54. | IRG4BC20K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 138K | | 55. | IRG4BC20K-S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | DDPak | 3 | -55°C | 150°C | 162K | | 56. | IRG4BC20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | - | 3 | -55°C | 150°C | 199K | | 57. | IRG4BC20KD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.27V @ VGE = 15V, IC = 9.0A | IRF | DDPak | 3 | -55°C | 150°C | 222K | | 58. | IRG4BC20MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A | IRF | - | 3 | -55°C | 150°C | 251K | | 59. | IRG4BC20MD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.85V @ VGE = 15V, IC = 11A | IRF | DDPak | 3 | -55°C | 150°C | 200K | | 60. | IRG4BC20S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A | IRF | - | 3 | -55°C | 150°C | 157K |
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