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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | ARF744S25 | 2500 V, 3725 A, 48 kA fast recovery diode | POSEI | - | 2 | -30°C | 150°C | 44K |
| 82. | ARF771LTS45 | 4500 V, 1730 A, 28 kA fast recovery diode | POSEI | - | 2 | -30°C | 140°C | 105K |
| 83. | ARF794HTS60 | 6000 V, 1060 A, 20 kA fast recovery diode | POSEI | - | 2 | -30°C | 125°C | 147K |
| 84. | ARF794LTS60 | 6000 V, 1160 A, 20 kA fast recovery diode | POSEI | - | 2 | -30°C | 125°C | 105K |
| 85. | IRF7103 | N-channel power MOSFET for fast switching applications, 50V, 3A | IRF | SO | 8 | -55°C | 150°C | 169K |
| 86. | IRF730 | 400 V, Power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 59K |
| 87. | IRF7303 | Power MOSFET for fast switching applications, 30V, 4.9A | IRF | SO | 8 | -55°C | 150°C | 111K |
| 88. | IRF7401 | N-channel power MOSFET, 20V, 10A | IRF | SO | 8 | -55°C | 150°C | 118K |
| 89. | IRF7476 | Power MOSFET for high frequency applications, 12V, 15A | IRF | SO | 8 | -55°C | 150°C | 111K |
| 90. | IRF7809A | HEXFET chipset for DC-DC converter. VDS = 30V, RDS(on) = 8.5mOhm | IRF | SO | 8 | -55°C | 150°C | 128K |
| 91. | IRF7809A | HEXFET chipset for DC-DC converter. VDS = 30V, RDS(on) = 8.5mOhm | IRF | SO | 8 | -55°C | 150°C | 128K |
| 92. | IRF7809AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 7.0mOhm | IRF | SO | 8 | -55°C | 150°C | 114K |
| 93. | IRF7811A | HEXFET chipset for DC-DC converter. VDS = 28V, RDS(on) = 12mOhm | IRF | SO | 8 | -55°C | 150°C | 128K |
| 94. | IRF7811AV | HEXFET power MOSFET. VDS = 30V, RDS(on) = 11mOhm | IRF | SO | 8 | -55°C | 150°C | 86K |
| 95. | IRF7811W | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 9.0mOhm | IRF | SO | 8 | -55°C | 150°C | 146K |
| 96. | IRF7822 | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 5.0mOhm | IRF | SO | 8 | -55°C | 150°C | 71K |
| 97. | IRF7901D1 | Dual FETKY co-packaged dual MOSFET plus schottky diode . VDS = 30V, RDS(on) = 38mOhm (Q1). VDS = 30V, RDS(on) = 32mOhm (Q2 and schottky). | IRF | SO | 8 | -55°C | 150°C | 256K |
| 98. | SRF735 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 35 V. Max average forward rectified current 7.5 A. | CNEL | ITO-220AC | 2 | -65°C | 150°C | 178K |
| 99. | SRF745 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 45 V. Max average forward rectified current 7.5 A. | CNEL | ITO-220AC | 2 | -65°C | 150°C | 178K |
| 100. | SRF750 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 50 V. Max average forward rectified current 7.5 A. | CNEL | ITO-220AC | 2 | -65°C | 150°C | 178K |
| 101. | SRF760 | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 60 V. Max average forward rectified current 7.5 A. | CNEL | ITO-220AC | 2 | -65°C | 150°C | 178K |
