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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 176 Displaying: 121 - 140| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 121. | ARF422S16 | 1600 V, 940 A, 14 kA fast recovery diode | POSEI | - | 2 | -30°C | 125°C | 30K | | 122. | ARF462S45 | 4500 V, 435 A, 10 kA fast recovery diode | POSEI | - | 2 | -30°C | 125°C | 105K | | 123. | IRF430 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A | IRF | TO-3 | 3 | -55°C | 150°C | 146K | | 124. | IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | IRF | TO-3 | 3 | -55°C | 150°C | 142K | | 125. | IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | IRF | TO-204AA | 3 | -55°C | 150°C | 142K | | 126. | IRF440 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A | IRF | TO-204AE | 3 | -55°C | 150°C | 142K | | 127. | IRF450 | Power dissipation 125 W Transistor polarity N Channel Centres fixing 30 mm Current Id cont. 13 A Current Idm pulse 52 A Pitch lead 11 mm Voltage Vds max 500 V Resistance Rds on 0.4 R | FAIR | TO-3 | - | - | - | 56K | | 128. | IRF450 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A | IRF | TO-3 | 3 | -55°C | 150°C | 144K | | 129. | IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | IRF | TO-3 | 3 | -55°C | 150°C | 140K | | 130. | IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | IRF | TO-204AA | 3 | -55°C | 150°C | 140K | | 131. | IRF460 | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A | IRF | TO-204AE | 3 | -55°C | 150°C | 140K | | 132. | IRF4905 | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A | IRF | - | 3 | -55°C | 175°C | 108K | | 133. | IRF4905L | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A | IRF | TO-262 | 3 | -55°C | 175°C | 163K | | 134. | IRF4905S | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A | IRF | DDPak | 3 | -55°C | 175°C | 163K | | 135. | MRF428 | 150 W, 30 MHz, RF power transistor NPN silicon | MACOM | - | 4 | - | - | 628K | | 136. | MRF429 | 150 W, 30 MHz, RF power transistor NPN silicon | MACOM | - | 4 | - | - | 163K | | 137. | MRF448 | 250 W, 30 MHz, RF power transistor NPN silicon | MACOM | - | 4 | - | - | 135K | | 138. | MRF448 | 250 W, 30 MHz, RF power transistor NPN silicon | MACOM | - | 4 | - | - | 135K | | 139. | MRF454 | 80 W, 30 MHz, RF power transistor NPN silicon | MACOM | - | 4 | - | - | 90K | | 140. | MRF455 | 60 W, 30 MHz, RF power transistor NPN silicon | MACOM | - | 4 | - | - | 92K |
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