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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 377 Displaying: 241 - 260| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 241. | IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | IRF | - | 3 | -55°C | 175°C | 195K | | 242. | IRF1010EL | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | IRF | TO-262 | 3 | -55°C | 175°C | 123K | | 243. | IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | IRF | DDPak | 3 | -55°C | 175°C | 123K | | 244. | IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | IRF | - | 3 | -55°C | 175°C | 211K | | 245. | IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | IRF | TO-262 | 3 | -55°C | 175°C | 146K | | 246. | IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | IRF | DDPak | 3 | -55°C | 175°C | 146K | | 247. | IRF1104 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A. | IRF | - | 3 | -55°C | 175°C | 101K | | 248. | IRF1310N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | IRF | - | 3 | -55°C | 175°C | 96K | | 249. | IRF1310NS | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A. | IRF | DDPak | 3 | -55°C | 175°C | 156K | | 250. | IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | IRF | TO-3 | 3 | -55°C | 175°C | 144K | | 251. | IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | IRF | TO-204AA | 3 | -55°C | 175°C | 144K | | 252. | IRF140 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole. BVDSS = 100V, RDS(on) = 0.077 Ohm, ID = 28A. | IRF | TO-204AE | 3 | -55°C | 175°C | 144K | | 253. | IRF1404 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | IRF | - | 3 | -55°C | 175°C | 107K | | 254. | IRF1404L | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | IRF | TO-262 | 3 | -55°C | 175°C | 306K | | 255. | IRF1404S | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.004 Ohm, ID = 162A. | IRF | DDPak | 3 | -55°C | 175°C | 306K | | 256. | IRF1405 | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 169A. | IRF | - | 3 | -55°C | 175°C | 116K | | 257. | IRF1405L | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A. | IRF | TO-262 | 3 | -55°C | 175°C | 154K | | 258. | IRF1405S | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A. | IRF | DDPak | 3 | -55°C | 175°C | 154K | | 259. | IRF1407 | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 130A. | IRF | - | 3 | -55°C | 175°C | 127K | | 260. | MRF175LV | 100 W, 28 V,RF power field-effect transistor | MACOM | - | - | - | - | 144K |
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