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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | ERD80-004 | Schottky barrier diode | CALLM | - | 2 | -40°C | 125°C | 72K |
| 42. | KM416RD8AC-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | SMSNG | microBGA(normal CSP) | 62 | 0°C | 70°C | 3M |
| 43. | KM416RD8AC-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | SMSNG | microBGA(normal CSP) | 62 | 0°C | 70°C | 3M |
| 44. | KM416RD8AC-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | SMSNG | microBGA(normal CSP) | 62 | 0°C | 70°C | 3M |
| 45. | KM416RD8AD-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | SMSNG | microBGA(mirrored CS | 62 | 0°C | 70°C | 3M |
| 46. | KM416RD8AD-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | SMSNG | microBGA(mirrored CS | 62 | 0°C | 70°C | 3M |
| 47. | KM416RD8AD-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | SMSNG | microBGA(mirrored CS | 62 | 0°C | 70°C | 3M |
| 48. | KM416RD8AS-RM80 | 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). | SMSNG | microBGA | 54 | 0°C | 90°C | 3M |
| 49. | KM416RD8AS-SM80 | 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). | SMSNG | microBGA | 54 | 0°C | 90°C | 3M |
| 50. | KM418RD8AC-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | SMSNG | microBGA(normal CSP) | 62 | 0°C | 70°C | 3M |
| 51. | KM418RD8AC-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | SMSNG | microBGA(normal CSP) | 62 | 0°C | 70°C | 3M |
| 52. | KM418RD8AC-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | SMSNG | microBGA(normal CSP) | 62 | 0°C | 70°C | 3M |
| 53. | KM418RD8AD-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | SMSNG | microBGA(mirrored CS | 62 | 0°C | 70°C | 3M |
| 54. | KM418RD8AD-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | SMSNG | microBGA(mirrored CS | 62 | 0°C | 70°C | 3M |
| 55. | KM418RD8AD-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | SMSNG | microBGA(mirrored CS | 62 | 0°C | 70°C | 3M |
| 56. | MBRD835L | 35V; 8A low VF schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications | DIODS | DPAK | 3 | -65°C | 125°C | 62K |
| 57. | MBRD835L | Switchmode power rectifier | MOT | TO-220 | 4 | -65°C | 150°C | 127K |
| 58. | MBRD835L | Switchmode power rectifier | MOT | TO-220 | 4 | -65°C | 150°C | 127K |
| 59. | W4NRD8C-U000 | Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K |
| 60. | W4SRD8R-0D00 | Diameter: 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | CREE | - | - | - | - | 279K |
