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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | CL7256ERC208-10 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 42. | CL7256ERC208-12 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 43. | CL7256ERC208-12P | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 44. | CL7256ERC208-15 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 45. | CL7256ERC208-20 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 46. | CL7256SRC208-10 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 47. | CL7256SRC208-15 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 48. | CL7256SRC208-6 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 49. | CL7256SRC208-7 | Laser processed logic device | CLELO | QFP | 208 | 0°C | 70°C | 190K |
| 50. | IRFRC20 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0A | IRF | TO-252AA | 3 | -55°C | 150°C | 169K |
| 51. | IRFRC20 | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0A | IRF | D-PAK | 3 | -55°C | 150°C | 169K |
| 52. | IRG4RC20F | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A | IRF | D-PAK | 3 | -55°C | 150°C | 264K |
| 53. | IRG4RC20F | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.82V @ VGE = 15V, IC = 12A | IRF | TO-252AA | 3 | -55°C | 150°C | 264K |
| 54. | RC201 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 50V, max RMS bridge input voltage 35V, max DC blocking voltage 50V. Max average forward rectified current 2.0A at Ta=25degC. | RECTR | RC-2 | 4 | -55°C | 125°C | 20K |
| 55. | RC202 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 100V, max RMS bridge input voltage 70V, max DC blocking voltage 100V. Max average forward rectified current 2.0A at Ta=25degC. | RECTR | RC-2 | 4 | -55°C | 125°C | 20K |
| 56. | RC203 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 2.0A at Ta=25degC. | RECTR | RC-2 | 4 | -55°C | 125°C | 20K |
| 57. | RC204 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 400V, max RMS bridge input voltage 280V, max DC blocking voltage 400V. Max average forward rectified current 2.0A at Ta=25degC. | RECTR | RC-2 | 4 | -55°C | 125°C | 20K |
| 58. | RC205 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward rectified current 2.0A at Ta=25degC. | RECTR | RC-2 | 4 | -55°C | 125°C | 20K |
| 59. | RC206 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 2.0A at Ta=25degC. | RECTR | RC-2 | 4 | -55°C | 125°C | 20K |
| 60. | RC207 | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified current 2.0A at Ta=25degC. | RECTR | RC-2 | 4 | -55°C | 125°C | 20K |
