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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | IRG4RC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | TO-252AA | 3 | -55°C | 150°C | 120K |
| 22. | IRG4RC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | D-PAK | 3 | -55°C | 150°C | 120K |
| 23. | IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | D-PAK | 3 | -55°C | 150°C | 189K |
| 24. | IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | TO-252AA | 3 | -55°C | 150°C | 189K |
| 25. | IRG4RC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | TO-252AA | 3 | -55°C | 150°C | 189K |
| 26. | IRG4RC10U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A | IRF | D-PAK | 3 | -55°C | 150°C | 131K |
| 27. | IRG4RC10U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A | IRF | TO-252AA | 3 | -55°C | 150°C | 131K |
| 28. | IRG4RC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | IRF | TO-252AA | 3 | -55°C | 150°C | 191K |
| 29. | IRG4RC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.15V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | IRF | D-PAK | 3 | -55°C | 150°C | 191K |
| 30. | RC10S01 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 31. | RC10S01G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 32. | RC10S02 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 33. | RC10S02G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 34. | RC10S04 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 35. | RC10S04G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 36. | RC10S06 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 37. | RC10S06G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 38. | RC10S08G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 39. | RC10S10 | Silicon silastic cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
| 40. | RC10S10G | Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 10 A. | SSE | - | - | -50°C | 150°C | 14K |
