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Found: 418      Displaying: 281 - 300
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
281.
IRFPS3810HEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.009 Ohm, ID = 170 A
IRF
SUPER-247
3
-55°C
175°C
124K
282.
IRFPS3815HEXFET power MOSFET. VDSS = 150 V, RDS(on) = 0.015 Ohm, ID = 105 A
IRF
SUPER-247
3
-55°C
175°C
101K
283.
MPS3390NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
284.
MPS3391NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
285.
MPS3392NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
286.
MPS3393NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
287.
MPS3394NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
288.
MPS3395NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
289.
MPS3396NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
290.
MPS3397NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
291.
MPS3398NPN silicon planar epitaxial transistor
ME
TO-92A
3
-
-
57K
292.
MPS35695V, 625mW silicon planar transistor
ME
TO-92A
3
-55°C
150°C
54K
293.
MPS3702360mW silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
299K
294.
MPS3703360mW silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
299K
295.
MPS3704360mW silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
299K
296.
MPS3705360mW silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
299K
297.
MPS3706360mW silicon general purpose AF transistor
ME
TO-92B
3
-55°C
150°C
299K
298.
TPS333Thermopile detector. Sensitive area 0.7 x 0.7 mm. Window size 2.4 x 2.4 mm.
PERK
TO-18
4
-40°C
100°C
271K
299.
TPS334Thermopile detector
PERK
TO-5
4
-40°C
100°C
273K
300.
TPS334L10.6Thermopile detector
PERK
TO-5
4
-40°C
100°C
273K
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