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Found: 1133      Displaying: 1101 - 1120
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
1101.
 28C256API-2High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
TURBO
PDIP
28
-40°C
85°C
41K
1102.
 28C256API-3High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
TURBO
PDIP
28
-40°C
85°C
41K
1103.
 28C256API-4High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
TURBO
PDIP
28
-40°C
85°C
41K
1104.
 28C64API-1High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns.
TURBO
PDIP
28
-40°C
85°C
42K
1105.
 28C64API-2High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns.
TURBO
PDIP
28
-40°C
85°C
42K
1106.
 28C64API-3High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
TURBO
PDIP
28
-40°C
85°C
42K
1107.
 28C64API-4High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
TURBO
PDIP
28
-40°C
85°C
42K
1108.
 28LV256PI-3Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
TURBO
PDIP
28
-40°C
85°C
41K
1109.
 28LV256PI-4Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
TURBO
PDIP
28
-40°C
85°C
41K
1110.
 28LV256PI-5Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
TURBO
PDIP
28
-40°C
85°C
41K
1111.
 28LV256PI-6Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
TURBO
PDIP
28
-40°C
85°C
41K
1112.
 28LV64PI-3Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
TURBO
PDIP
28
-40°C
85°C
42K
1113.
 28LV64PI-4Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns.
TURBO
PDIP
28
-40°C
85°C
42K
1114.
 28LV64PI-5Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
TURBO
PDIP
28
-40°C
85°C
42K
1115.
 28LV64PI-6Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
TURBO
PDIP
28
-40°C
85°C
42K
1116.
 29C010PI-1High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
TURBO
PDIP
32
-40°C
85°C
52K
1117.
 29C010PI-2High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
TURBO
PDIP
32
-40°C
85°C
52K
1118.
 29C010PI-3High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
TURBO
PDIP
32
-40°C
85°C
52K
1119.
 29C021PI-1High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns.
TURBO
PDIP
32
-40°C
85°C
54K
1120.
 29C021PI-2High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns.
TURBO
PDIP
32
-40°C
85°C
54K
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