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Found: 728      Displaying: 421 - 440
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
421.
CP800Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 8A . Max recurrent peak reverse voltage 50V. Max average rectified output 8.0A(at Tc=50), 3.0(at Ta=25).
PAJIT
CP-8
4
-55°C
125°C
59K
422.
CP801Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 8A . Max recurrent peak reverse voltage 100V. Max average rectified output 8.0A(at Tc=50), 3.0(at Ta=25).
PAJIT
CP-8
4
-55°C
125°C
59K
423.
CP802Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 8A . Max recurrent peak reverse voltage 200V. Max average rectified output 8.0A(at Tc=50), 3.0(at Ta=25).
PAJIT
CP-8
4
-55°C
125°C
59K
424.
CP804Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 8A . Max recurrent peak reverse voltage 400V. Max average rectified output 8.0A(at Tc=50), 3.0(at Ta=25).
PAJIT
CP-8
4
-55°C
125°C
59K
425.
CP806Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 8A . Max recurrent peak reverse voltage 600V. Max average rectified output 8.0A(at Tc=50), 3.0(at Ta=25).
PAJIT
CP-8
4
-55°C
125°C
59K
426.
CP808Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 8A . Max recurrent peak reverse voltage 800V. Max average rectified output 8.0A(at Tc=50), 3.0(at Ta=25).
PAJIT
CP-8
4
-55°C
125°C
59K
427.
GP800DCM181800V Hi-reliability chopper single switch IGBT module
DYNEX
-
-
-
-
158K
428.
GP800DDM181800V Hi-reliability chopper dual switch IGBT module
DYNEX
-
12
-
-
144K
429.
GP800FSM181800V Hi-reliability single switch IGBT module
DYNEX
-
12
-
-
143K
430.
GP800NSM333300V Hi-reliability single switch IGBT module
DYNEX
-
6
-
-
93K
431.
GP800NSS333300V single switch IGBT module
DYNEX
-
6
-
-
93K
432.
GP801DCM181800V Hi-reliability chopper switch low voltage IGBT module
DYNEX
-
12
-
-
158K
433.
GP801DDM181800V Hi-reliability dual switch IGBT module
DYNEX
-
12
-
-
142K
434.
GP801FSM181800V Hi-reliability dual switch low voltage IGBT module
DYNEX
-
12
-
-
141K
435.
KSP8098Amplifier transistor, NPN, collector-emitter=60V, collector power dissipation=625 mW
FAIR
-
3
-55°C
150°C
37K
436.
KSP8099Amplifier transistor, NPN, collector-emitter=80V, collector power dissipation=625 mW
FAIR
-
3
-55°C
150°C
37K
437.
STP80N0509TRANSISTOR MOSFET TO-220
STM
-
-
-
-
114K
438.
USP8098Amplifier transistor. Vcbo = 60V, Vceo = 60V, Vebo = 6V, Ic = 500mA, Pc = 625mW
USHA
-
3
0°C
150°C
73K
439.
USP8099Amplifier transistor. Vcbo = 80V, Vceo = 80V, Vebo = 6V, Ic = 500mA, Pc = 625mW
USHA
-
3
0°C
150°C
73K
440.
XPC860DEZP80nnQuad integrated communications controller, 10 Mbps, 80 MHz
MOT
BGA
357
0°C
95°C
857K
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