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Found: 308      Displaying: 201 - 220
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
201.
3KP70CBreakdown volatge: 77.80V, 3000W transient voltage suppressor
WTE
P-600
2
-55°C
175°C
68K
202.
3KP70CBreakdown volatge: 77.80V, 3000W transient voltage suppressor
WTE
P-600
2
-55°C
175°C
68K
203.
CEP703ALN-channel logic level enhancement mode field effect transistor
CETSE
TO-220
3
-65°C
175°C
516K
204.
CEP703ALS2N-channel logic level enhancement mode field effect transistor
CETSE
TO-220
3
-65°C
175°C
528K
205.
CEP7050N-channel logic level enhancement mode field effect transistor
CETSE
TO-220
3
-65°C
175°C
505K
206.
CEP7050LN-channel logic level enhancement mode field effect transistor
CETSE
TO-220
3
-65°C
175°C
508K
207.
CEP7060N-channel logic level enhancement mode field effect transistor
CETSE
TO-220
3
-65°C
175°C
507K
208.
CEP7060LN-channel logic level enhancement mode field effect transistor
CETSE
TO-220
3
-65°C
175°C
511K
209.
CEP7060LRN-channel logic level enhancement mode field effect transistor
CETSE
TO-220
3
-65°C
175°C
530K
210.
CEP7060RN-channel logic level enhancement mode field effect transistor
CETSE
TO-220
3
-65°C
175°C
527K
211.
LP70135 Watt, silicon gate enhancement mode RF power LDMOS transistor
POFET
-
2
-65°C
150°C
35K
212.
LP70270 Watt, silicon gate enhancement mode RF power LDMOS transistor
POFET
-
2
-65°C
150°C
35K
213.
MA4P7000B High power PIN diode
MACOM
SMQ
2
-65°C
175°C
311K
214.
MA4P7000F High power PIN diode
MACOM
SMQ
2
-65°C
175°C
311K
215.
MA4P7001100 V, High power PIN diode
MACOM
SMQ
2
-65°C
175°C
311K
216.
MA4P7002200 V, High power PIN diode
MACOM
SMQ
2
-65°C
175°C
311K
217.
MA4P7006600 V, High power PIN diode
MACOM
SMQ
2
-65°C
175°C
311K
218.
MA4P7006F600 V, High power PIN diode
MACOM
SMQ
2
-65°C
175°C
311K
219.
MA4P709-2231500 V, PIN diode chip
MACOM
-
-
-65°C
175°C
506K
220.
SP70125 Watt, silicon gate enhancement mode RF power VDMOS transistor
POFET
-
2
-65°C
150°C
36K
221.
SP70240 Watt, silicon gate enhancement mode RF power VDMOS transistor
POFET
-
2
-65°C
150°C
36K
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