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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 141. | CEP6020P | Single P-channel enhancement mode MOSFET | CETSE | TO-220 | 3 | -65°C | 175°C | 494K |
| 142. | CEP6030AL | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 516K |
| 143. | CEP6030L | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 516K |
| 144. | CEP6030LS2 | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 530K |
| 145. | CEP6031L | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 513K |
| 146. | CEP6031LS2 | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 531K |
| 147. | CEP603AL | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 515K |
| 148. | CEP603ALS2 | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 529K |
| 149. | CEP6060 | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 510K |
| 150. | CEP6060L | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 516K |
| 151. | CEP6060LR | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 534K |
| 152. | CEP6060R | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 527K |
| 153. | ESP60-03S | 60 Watt, output voltage 3V (12A), switching power supplier | TRACO | SO | - | -10°C | 60°C | 329K |
| 154. | P600A | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS voltage 35V. Maximum DC blocking voltage 50V | WINGS | R-6 | 2 | -65°C | 175°C | 344K |
| 155. | P600B | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS voltage 70V. Maximum DC blocking voltage 100V | WINGS | R-6 | 2 | -65°C | 175°C | 344K |
| 156. | P600D | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V | WINGS | R-6 | 2 | -65°C | 175°C | 344K |
| 157. | P600G | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V | WINGS | R-6 | 2 | -65°C | 175°C | 344K |
| 158. | P600J | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V | WINGS | R-6 | 2 | -65°C | 175°C | 344K |
| 159. | P600K | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V | WINGS | R-6 | 2 | -65°C | 175°C | 344K |
| 160. | P600M | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V | WINGS | R-6 | 2 | -65°C | 175°C | 344K |
