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Found: 205 Displaying: 141 - 160| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 141. | CP3508 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward current for resistive load at Tc=55degC 35A. | PAJIT | CP-25W | 4 | -55°C | 150°C | 68K | | 142. | MP3505 | 35A, 50V ultra fast recovery rectifier | MCC | MP-50 | - | - | - | 309K | | 143. | MP351 | 100 V, 35 A, bridge rectifier | LRC | - | 4 | - | - | 72K | | 144. | MP351 | 35A, 100V ultra fast recovery rectifier | MCC | MP-50 | - | - | - | 309K | | 145. | MP3510 | 1000 V, 35 A, bridge rectifier | LRC | - | 4 | - | - | 72K | | 146. | MP3510 | 35A, 1000V ultra fast recovery rectifier | MCC | MP-50 | - | - | - | 309K | | 147. | MP352 | 200 V, 35 A, bridge rectifier | LRC | - | 4 | - | - | 72K | | 148. | MP352 | 35A, 200V ultra fast recovery rectifier | MCC | MP-50 | - | - | - | 309K | | 149. | MP354 | 400 V, 35 A, bridge rectifier | LRC | - | 4 | - | - | 72K | | 150. | MP356 | 600 V, 35 A, bridge rectifier | LRC | - | 4 | - | - | 72K | | 151. | MP358 | 800 V, 35 A, bridge rectifier | LRC | - | 4 | - | - | 72K | | 152. | TC55RP3501ECB | Low dropout positive voltage rgulator. Output voltage 3.5V. Tolerance +-1%. | TCOM | SOT-23A | 3 | -40°C | 85°C | 50K | | 153. | TC55RP3501EMB | Low dropout positive voltage rgulator. Output voltage 3.5V. Tolerance +-1%. | TCOM | SOT-89 | 3 | -40°C | 85°C | 50K | | 154. | TC55RP3501EZB | Low dropout positive voltage regulator. Output voltage 3.5V. Tolerance +-1%. | TCOM | - | 3 | -40°C | 85°C | 50K | | 155. | TC55RP3502ECB | Low dropout positive voltage rgulator. Output voltage 3.5V . Tolerance +-2%. | TCOM | SOT-23A | 3 | -40°C | 85°C | 50K | | 156. | TC55RP3502EMB | Low dropout positive voltage rgulator. Output voltage 3.5V. Tolerance +-2%. | TCOM | SOT-89 | 3 | -40°C | 85°C | 50K | | 157. | TC55RP3502EZB | Low dropout positive voltage regulator. Output voltage 3.5V. Tolerance +-2%. | TCOM | - | 3 | -40°C | 85°C | 50K | | 158. | TIP35A | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 159. | TIP35B | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K | | 160. | TIP35C | NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W. | USHA | TO-218 | 3 | -65°C | 150°C | 47K |
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