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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
161. | AP3216F3C | In ra-red emitting diode. Peak wavelength 940 nm. Lens type water clear. | KNBRT | - | 2 | -40°C | 85°C | 127K |
162. | AP3216MBC | 3.2 x 1.6mm SMD chip LED lamp. Blue. Peak wavelength 430 nm. Lens type water clear. | KNBRT | SMD | 2 | -40°C | 80°C | 95K |
163. | AP3216MGC | 3.2 x 1.6mm SMD chip LED lamp. Mega green. Peak wavelength 574 nm. Lens type water clear. | KNBRT | SMD | 2 | -40°C | 85°C | 94K |
164. | AP3216SF4C | In ra-red emitting diode. Peak wavelength 880 nm. Lens type water clear. | KNBRT | - | 2 | -40°C | 85°C | 127K |
165. | D2587P325 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.25 THz. Center wavelength 1551.58 nm. High optical power 20 mW, CW | AGERE | Metal/ceramic butter | 14 | -25°C | 70°C | 122K |
166. | IRFP32N50K | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.135 Ohm, ID = 32 A | IRF | TO-247AC | 3 | -55°C | 150°C | 94K |
167. | KS57P3204 | Single-chip CMOS microcontroller, OTP version | SMSNG | QFP | 64 | -40°C | 85°C | 306K |
168. | TIP32A | 60 V, PNP plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 25K |
169. | TIP32A | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K |
170. | TIP32A | 60V 3A complementary silicon plastic power transistor | MOSP | TO-220 | 4 | -65°C | 150°C | 192K |
171. | TIP32B | 80 V, PNP plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 25K |
172. | TIP32B | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K |
173. | TIP32B | 80V 3A complementary silicon plastic power transistor | MOSP | TO-220 | 4 | -65°C | 150°C | 192K |
174. | TIP32C | 100 V, PNP plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 25K |
175. | TIP32C | 5V complementary silicon power transistor | ME | - | 3 | -65°C | 150°C | 43K |
176. | TIP32C | 100V 3A complementary silicon plastic power transistor | MOSP | TO-220 | 4 | -65°C | 150°C | 192K |
177. | TIP32C | Silicon epitaxial planar transistor. Collector-emitter voltage peak value 100V. Collector-emitter voltage(open base) 100V. Emitter-base voltage(open collector) 5V | WINGS | TO-220 | 3 | - | - | 61K |
178. | TIP32D | 120V 3A complementary silicon high-power transistor | MOSP | TO-220 | 4 | -65°C | 150°C | 200K |
179. | TIP32E | 140V 3A complementary silicon high-power transistor | MOSP | TO-220 | 4 | -65°C | 150°C | 200K |
180. | TIP32F | 160V 3A complementary silicon high-power transistor | MOSP | TO-220 | 4 | -65°C | 150°C | 200K |