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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 321. | 5KP30A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=33.3V(min), VBR=36.8V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | RECTR | R-6 | 2 | -55°C | 175°C | 970K |
| 322. | EGP30D | 200 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -65°C | 175°C | 63K |
| 323. | EGP30D | 200 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -65°C | 175°C | 63K |
| 324. | EGP30F | 300 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -65°C | 175°C | 63K |
| 325. | EGP30F | 300 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -65°C | 175°C | 63K |
| 326. | EGP30G | 400 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -65°C | 175°C | 63K |
| 327. | EGP30G | 400 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -65°C | 175°C | 63K |
| 328. | EGP30J | 600 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -55°C | 150°C | 63K |
| 329. | EGP30J | 600 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -55°C | 150°C | 63K |
| 330. | EGP30K | 800 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -55°C | 150°C | 63K |
| 331. | EGP30K | 800 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -55°C | 150°C | 63K |
| 332. | EGP30M | 1000 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -55°C | 150°C | 63K |
| 333. | EGP30M | 1000 V, 3A sintered glass passivated junction high efficient rectifier | ZOWIE | - | 2 | -55°C | 150°C | 63K |
| 334. | HVP080P3000 | 3 mA, high voltage power supply | VMI | - | 3 | 0°C | 50°C | 165K |
| 335. | PD65P30HA | 65 W DC/DC open frame/case with 30-90 V input, +/-5/+12 V/6/3/-0.5 A output | HNEL | - | 8 | 0°C | 70°C | 78K |
| 336. | PD65P30MA | 65 W DC/DC open frame/case with 20-60 V input, +/-5/+12 V/6/3/-0.5 A output | HNEL | - | 8 | 0°C | 70°C | 78K |
| 337. | SP300S | 30000 V rectifier stack 0.5 A forward current, 3000 ns recovery time | VMI | - | 2 | -55°C | 150°C | 71K |
| 338. | TIP30A | 5V complementary silicon epitaxial- base power transistor | ME | TO-220B | 3 | -65°C | 150°C | 56K |
| 339. | TIP30B | 5V complementary silicon epitaxial- base power transistor | ME | TO-220B | 3 | -65°C | 150°C | 56K |
| 340. | TIP30C | 5V complementary silicon epitaxial- base power transistor | ME | TO-220B | 3 | -65°C | 150°C | 56K |
