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Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 71 Displaying: 21 - 40| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 21. | HGTP2N120BN | 12A, 1200V, NPT Series N-Channel IGBT | INTRS | - | - | - | - | 85K | | 22. | HGTP2N120BND | 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | INTRS | - | - | - | - | 87K | | 23. | HGTP2N120CN | 13A, 1200V, NPT Series N-Channel IGBT | INTRS | - | - | - | - | 89K | | 24. | HGTP2N120CND | 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | INTRS | - | - | - | - | 92K | | 25. | IXGP2N100 | 1000V high voltage IGBT | IXYS | TO-220AC | 4 | -55°C | 150°C | 85K | | 26. | IXGP2N100A | 1000V high voltage IGBT | IXYS | TO-220AC | 4 | -55°C | 150°C | 85K | | 27. | IXTP2N100 | 1000V high voltage MOSFET | IXYS | - | 3 | -55°C | 150°C | 76K | | 28. | IXTP2N80 | 800V high voltage MOSFET | IXYS | - | 3 | -55°C | 150°C | 46K | | 29. | MT28C3212P2NFL-10B | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 564K | | 30. | MT28C3212P2NFL-10BET | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 564K | | 31. | MT28C3212P2NFL-11B | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 564K | | 32. | MT28C3212P2NFL-11BET | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 564K | | 33. | MT28C3212P2NFL-11T | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 564K | | 34. | MT28C3212P2NFL-11TET | 0.9-2.2V low voltage, extended temperature SRAM COMBO memory | MICRN | FBGA | 66 | -40°C | 85°C | 564K | | 35. | MTP2N40E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 217K | | 36. | MTP2N50E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 244K | | 37. | MTP2N60E | TMOS E-FET power field effect transistor | MOT | - | 4 | -55°C | 150°C | 219K | | 38. | P2N2222A | Amplifier transistor | MOT | TO-226AA | 3 | -55°C | 150°C | 238K | | 39. | P2N2907A | Amplifier transistor | MOT | TO-226AA | 3 | -55°C | 150°C | 240K | | 40. | RFP2N10 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs | INTRS | - | - | - | - | 46K |
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