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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 161. | 5KP14A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=15.6V(min), VBR=17.2V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | RECTR | R-6 | 2 | -55°C | 175°C | 970K |
| 162. | MA4P1450 | Surface mount PIN diode | MACOM | SMQ | - | -65°C | 175°C | 143K |
| 163. | MAP140-1024 | Input voltage: 85-264V, output voltage 24/28V (4.6/4A), power supplier | PWONE | - | - | 0°C | 70°C | 575K |
| 164. | MAP140-1048 | Input voltage: 85-264V, output voltage 48V (2.3A), power supplier | PWONE | - | - | 0°C | 70°C | 575K |
| 165. | MAP140-3000P | Input voltage: 85-264V, multiple output voltage, power supplier | PWONE | - | - | 0°C | 70°C | 575K |
| 166. | OP140A | GaAs plastic infrared emitting diode | OPTEK | - | 2 | -40°C | 100°C | 234K |
| 167. | OP140B | GaAs plastic infrared emitting diode | OPTEK | - | 2 | -40°C | 100°C | 234K |
| 168. | OP140C | GaAs plastic infrared emitting diode | OPTEK | - | 2 | -40°C | 100°C | 234K |
| 169. | OP140D | GaAs plastic infrared emitting diode | OPTEK | - | 2 | -40°C | 100°C | 234K |
| 170. | OP145A | GaAs plastic infrared emitting diode | OPTEK | - | 2 | -40°C | 100°C | 352K |
| 171. | OP145B | GaAs plastic infrared emitting diode | OPTEK | - | 2 | -40°C | 100°C | 352K |
| 172. | OP145C | GaAs plastic infrared emitting diode | OPTEK | - | 2 | -40°C | 100°C | 352K |
| 173. | OP145D | GaAs plastic infrared emitting diode | OPTEK | - | 2 | -40°C | 100°C | 352K |
| 174. | TIP140 | NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V | WINGS | - | 3 | - | - | 24K |
| 175. | TIP140T | 60V 10A darlington coplementary silicon power transistor | MOSP | TO-220 | 4 | -55°C | 150°C | 204K |
| 176. | TIP141 | NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V | WINGS | - | 3 | - | - | 24K |
| 177. | TIP142 | NPN epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V | WINGS | - | 3 | - | - | 24K |
| 178. | TIP145 | PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V | WINGS | - | 3 | - | - | 26K |
| 179. | TIP146 | PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V | WINGS | - | 3 | - | - | 26K |
| 180. | TIP147 | PNP epitaxial silicon darlington transistor. High DC current gain. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V | WINGS | - | 3 | - | - | 26K |
