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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 541. | 5KP12(C)A | 12V; 5000W transient voltage suppressor | DIODS | Molded Plastic | 2 | -55°C | 175°C | 67K |
| 542. | 5KP120 | 120V, 23A glass passivated transient voltage suppressor | LITON | R-6 | 2 | -55°C | 150°C | 60K |
| 543. | 5KP120(C)A | 120V; 5000W transient voltage suppressor | DIODS | Molded Plastic | 2 | -55°C | 175°C | 67K |
| 544. | 5KP120C | 120V, 23A glass passivated transient voltage suppressor | LITON | R-6 | 2 | -55°C | 150°C | 60K |
| 545. | 5KP12A | 12 V, 5 mA, 5000 W, glass passivated junction transient voltage suppressor | TRSYS | P-600 | 2 | -55°C | 175°C | 252K |
| 546. | 5KP12C | 12V, 227A glass passivated transient voltage suppressor | LITON | R-6 | 2 | -55°C | 150°C | 60K |
| 547. | 5KP12C | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 13.3 V, Vbrmax = 16.3 V. Test current It = 5.0 mA. | SSE | R-6 | 2 | -55°C | 175°C | 28K |
| 548. | 5KP12C | 12 V, 5 mA, 5000 W, glass passivated junction transient voltage suppressor | TRSYS | P-600 | 2 | -55°C | 175°C | 252K |
| 549. | 5KP12CA | 12V, 251A glass passivated transient voltage suppressor | LITON | R-6 | 2 | -55°C | 150°C | 60K |
| 550. | 5KP12CA | Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 13.3 V, Vbrmax = 14.7 V. Test current It = 5.0 mA. | SSE | R-6 | 2 | -55°C | 175°C | 28K |
| 551. | 5KP12CA | 12 V, 5 mA, 5000 W, glass passivated junction transient voltage suppressor | TRSYS | P-600 | 2 | -55°C | 175°C | 252K |
| 552. | PP1200D060 | 600V, 1200A Half Bridge POW-R-PAK power IGBT assembly | PWRX | - | - | - | - | 365K |
| 553. | TIP121 | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K |
| 554. | TIP122 | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K |
| 555. | TIP127 | PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. | USHA | TO-220 | 3 | -65°C | 150°C | 47K |
| 556. | TSP120C | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-201AE | 2 | -40°C | 65°C | 116K |
| 557. | TSP120C | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-201AE | 2 | -40°C | 65°C | 116K |
| 558. | TSP120C | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-214AA | 2 | -40°C | 65°C | 110K |
| 559. | TSP120SA | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-214AA | 2 | -40°C | 65°C | 109K |
| 560. | TSP120SB | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. | PAJIT | DO-214AA | 2 | -40°C | 65°C | 109K |
