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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 441. | 5KP12A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=13.3V(min), VBR=14.7V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | RECTR | R-6 | 2 | -55°C | 175°C | 970K |
| 442. | MA4P1200 | High power PIN diode | MACOM | SMQ | 2 | -65°C | 175°C | 311K |
| 443. | MA4P1250 | Surface mount PIN diode | MACOM | SMQ | - | -65°C | 175°C | 143K |
| 444. | OP123 | GaAs hermetic infrared emitting diode | OPTEK | - | - | -65°C | 125°C | 255K |
| 445. | OP124 | GaAs hermetic infrared emitting diode | OPTEK | - | - | -65°C | 125°C | 255K |
| 446. | P121 | 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | POFET | SO-8 | 8 | -65°C | 150°C | 32K |
| 447. | P122 | 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | POFET | SO | 6 | -65°C | 150°C | 43K |
| 448. | P123 | 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | POFET | SO-8 | 8 | -65°C | 150°C | 38K |
| 449. | P124 | 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | POFET | SO-8 | 8 | -65°C | 150°C | 33K |
| 450. | TIP120 | 60 V, NPN plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 28K |
| 451. | TIP121 | 80 V, NPN plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 28K |
| 452. | TIP122 | 100 V, NPN plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 28K |
| 453. | TIP125 | 60 V, PNP plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 28K |
| 454. | TIP126 | 80 V, PNP plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 28K |
| 455. | TIP127 | 100 V, PNP plastic power transistor | BOCA | TO-220 | 3 | -65°C | 150°C | 28K |
| 456. | ZXT10P12DE6TA | 12 V PNP silicon low saturation switching transistor | ZETEX | SOT | 6 | -55°C | 150°C | 232K |
| 457. | ZXT10P12DE6TA | 12 V PNP silicon low saturation switching transistor | ZETEX | SOT | 6 | -55°C | 150°C | 232K |
| 458. | ZXT10P12DE6TC | 12 V PNP silicon low saturation switching transistor | ZETEX | SOT | 6 | -55°C | 150°C | 232K |
| 459. | ZXT10P12DE6TC | 12 V PNP silicon low saturation switching transistor | ZETEX | SOT | 6 | -55°C | 150°C | 232K |
| 460. | ZXT12P12DXTA | Dual 12 V PNP silicon low saturation switching transistor | ZETEX | MSOP | 8 | -55°C | 150°C | 258K |
| 461. | ZXT12P12DXTA | Dual 12 V PNP silicon low saturation switching transistor | ZETEX | MSOP | 8 | -55°C | 150°C | 258K |
