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Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 1789 Displaying: 361 - 380| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 361. | 5KP100 | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=111V(min), VBR=136V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | RECTR | R-6 | 2 | -55°C | 175°C | 970K | | 362. | 5KP100A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=111V(min), VBR=123V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | RECTR | R-6 | 2 | -55°C | 175°C | 970K | | 363. | 5KP10A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=11.1V(min), VBR=12.3V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | RECTR | R-6 | 2 | -55°C | 175°C | 970K | | 364. | ACT5260PC-P10-POD | FR4 adapter | ACT | - | 179 | 0°C | 85°C | 199K | | 365. | EP10LA03 | 30 V, diode | NIHON | SOD | 2 | -40°C | 125°C | 28K | | 366. | EP10QY03 | 30 V, diode | NIHON | SOD | 2 | -40°C | 150°C | 28K | | 367. | FP100F | 10000 V rectifier stack 2.2 A forward current, 150 ns recovery time | VMI | - | 2 | -55°C | 150°C | 70K | | 368. | FP100S | 10000 V rectifier stack 2.2 A forward current, 3000 ns recovery time | VMI | - | 2 | -55°C | 150°C | 70K | | 369. | MA4P102-134 | 50 V, PIN diode chip | MACOM | - | - | -65°C | 175°C | 506K | | 370. | P1086 | P-Channel silicon junction field-effect transistor | IFET | TO-226AA | 3 | - | - | 94K | | 371. | P1087 | P-Channel silicon junction field-effect transistor | IFET | TO-226AA | 3 | - | - | 94K | | 372. | PD65P10LA | 65 W DC/DC open frame/case with 10-30 V input, 5 V/10 A output | HNEL | - | 8 | 0°C | 70°C | 78K | | 373. | R4430PC-P10-MCM | RISC microprocessor multichip module. | ACT | PGA | 179 | -55°C | 125°C | 169K | | 374. | SMPP1086 | P-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 94K | | 375. | SMPP1087 | P-Channel silicon junction field-effect transistor | IFET | SMD | 3 | - | - | 94K | | 376. | SP100F | 10000 V rectifier stack 0.5 A forward current, 150 ns recovery time | VMI | - | 2 | -55°C | 150°C | 71K | | 377. | SP100S | 10000 V rectifier stack 0.5 A forward current, 3000 ns recovery time | VMI | - | 2 | -55°C | 150°C | 71K | | 378. | SP100UF | 10000 V rectifier stack 0.5 A forward current, 70 ns recovery time | VMI | - | 2 | -55°C | 150°C | 71K | | 379. | TIP100 | 60 V, NPN plastic power transistor | BOCA | TO-220 | 3 | - | - | 26K | | 380. | TIP101 | 80 V, NPN plastic power transistor | BOCA | TO-220 | 3 | - | - | 26K |
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