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Found: 200      Displaying: 141 - 160
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
141.
GP-81BTriggered spark gap. O-A range (min/max) 40-100kV.
PERK
Ceramic-metal
-
-54°C
100°C
67K
142.
GP-82BTriggered spark gap. O-A range (min/max) 0.4-1.6 kV.
PERK
Ceramic-metal
-
-54°C
100°C
67K
143.
GP-85Triggered spark gap. O-A range (min/max) 2-6kV.
PERK
Ceramic-metal
-
-54°C
100°C
67K
144.
GP-86Triggered spark gap. O-A range (min/max) 6-15kV.
PERK
Ceramic-metal
-
-54°C
100°C
67K
145.
GP-87Triggered spark gap. O-A range (min/max) 10-24kV.
PERK
Ceramic-metal
-
-54°C
100°C
67K
146.
GP-89Triggered spark gap. O-A range (min/max) 0.7-2.1 kV.
PERK
Ceramic-metal
-
-54°C
100°C
67K
147.
GS71108ATP-8I8ns 128K x 8 1Mb asynchronous SRAM
GSITE
TSOP
32
-40°C
85°C
410K
148.
GS71116ATP-8I8ns 64K x 16 1Mb asynchronous SRAM
GSITE
TSOP
44
-40°C
85°C
438K
149.
GS71216TP-8I8ns 64K x 16 1Mb asynchronous SRAM
GSITE
TSOP
44
-40°C
85°C
182K
150.
GS72108ATP-8I8ns 256K x 8 2Mb asynchronous SRAM
GSITE
TSOP
44
-40°C
85°C
365K
151.
GS72108TP-8I8ns 256K x 8 2Mb asynchronous SRAM
GSITE
TSOP
44
-40°C
85°C
364K
152.
HM62V256LFP-8ULT32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns
HIT
SOP
28
0°C
70°C
111K
153.
HY62256ALLP-8532Kx8bit CMOS SRAM, standby current=25uA, 85ns
HEI
PDIP
28
0°C
70°C
820K
154.
HY62256ALP-8532Kx8bit CMOS SRAM, standby current=100uA, 85ns
HEI
PDIP
28
0°C
70°C
820K
155.
HY62256AP-8532Kx8bit CMOS SRAM, standby current=1mA, 85ns
HEI
PDIP
28
0°C
70°C
820K
156.
OGP-83Overvoltage spark gap. Static breakdown voltage range (min-max) 8-42 kV.
PERK
-
-
-54°C
100°C
89K
157.
SPC-1207P-821SMD power inductor
ME
-
2
-
-
254K
158.
TC551001CP-85131,072-word by 8 bit static RAM, access time 85ns
TOS
DIP
32
0°C
70°C
547K
159.
TC551001CP-85131,072-word by 8 bit static RAM, access time 85ns
TOS
DIP
32
0°C
70°C
547K
160.
TC551001CP-85L131,072-word by 8 bit static RAM, access time 85ns
TOS
DIP
32
0°C
70°C
547K
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