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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 761. | NTE5892 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 762. | NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 763. | NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 764. | NTE5898 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 765. | NTE5900 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 766. | NTE5901 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 767. | NTE5901 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 768. | NTE5902 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 769. | NTE5903 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 770. | NTE5904 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 771. | NTE5905 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 772. | NTE5908 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 773. | NTE5909 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 774. | NTE5910 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 775. | NTE5911 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 776. | NTE5911 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 777. | NTE5912 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 20A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 778. | NTE5914 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 779. | NTE5916 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 20A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 780. | NTE5918 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 20A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
