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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 701. | NTE584 | Silicon schottky diode. Repetitive peak reverse voltage Vrrm = 20V. Forward continuous current If = 35mA. | NTE | DO35 | 2 | -65°C | 200°C | 15K |
| 702. | NTE584 | Silicon schottky diode. Repetitive peak reverse voltage Vrrm = 20V. Forward continuous current If = 35mA. | NTE | DO35 | 2 | -65°C | 200°C | 15K |
| 703. | NTE5849 | Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 1000V. | NTE | DO4 | 2 | -65°C | 175°C | 18K |
| 704. | NTE585 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A. | NTE | - | 2 | -65°C | 125°C | 15K |
| 705. | NTE5850 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 706. | NTE5852 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 707. | NTE5854 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 708. | NTE586 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 3.0A. | NTE | - | 2 | -65°C | 125°C | 15K |
| 709. | NTE587 | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 200V. Max average forward rectified current 1.0A. | NTE | DO41 | 2 | -65°C | 150°C | 15K |
| 710. | NTE588 | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. | NTE | - | 2 | -65°C | 150°C | 15K |
| 711. | NTE588 | Silicon diode, ultra fast switch. Max reccurent peak reverse voltage 150V. Max average forward rectified current 3.0A. | NTE | - | 2 | -65°C | 150°C | 15K |
| 712. | NTE589 | Silicon rectifier, general purpose, fast recovery. Max reccurent peak reverse voltage 400V. Max average forward rectified current 6.0A. | NTE | - | 2 | -50°C | 125°C | 15K |
| 713. | NTE593 | Silicon diode, high speed switch. Repetitive peak reverse voltage 85V. Average rectified forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 150°C | 18K |
| 714. | NTE593 | Silicon diode, high speed switch. Repetitive peak reverse voltage 85V. Average rectified forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 150°C | 18K |
| 715. | NTE594 | Silicon diode, bandswitch. Continuous reverse voltage 35V. DC forward current 100mA. | NTE | SOT-23 | 3 | 0°C | 125°C | 16K |
| 716. | NTE595 | Silicon diode, dual, common cathode, high speed . Continuous reverse voltage 70V. DC forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 175°C | 19K |
| 717. | NTE596 | Silicon diode, dual, common anode, high speed . Continuous reverse voltage 70V. DC forward current 250mA. | NTE | SOT-23 | 3 | 0°C | 175°C | 19K |
| 718. | NTE597 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 200V. Average rectified forward current 8A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |
| 719. | NTE598 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 600V. Average rectified forward current 8A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |
| 720. | NTE599 | Silicon rectifier, ultra fast. Peak repetitive reverse voltage 200V. Average rectified forward current 15A. | NTE | TO220 | 2 | -65°C | 175°C | 18K |
