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Found: 830      Displaying: 501 - 520
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
501.
NTE5552Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
502.
NTE5554Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
503.
NTE5556Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 600V. Forward current 25A.
NTE
TO220
3
-40°C
125°C
20K
504.
NTE555ASilicon pin diode. VNF band switch.
NTE
DO34
2
0°C
150°C
17K
505.
NTE5562Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 200V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
506.
NTE5564Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
507.
NTE5566Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 600V. RMS on-state current It(rms) = 35A.
NTE
TO-48
3
-40°C
150°C
21K
508.
NTE5567Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 200V. Max non - repetitive peak voltage 300V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
509.
NTE5568Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 600V. Max non - repetitive peak voltage 700V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
510.
NTE5569Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 1200V. Max non - repetitive peak voltage 1300V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
511.
NTE5570Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 200V. Non - repetitive peak reverse blocking voltage, Vrsm = 500V. RMS on-state current, Itrms = 125A.
NTE
-
4
-40°C
125°C
21K
512.
NTE5571Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 1600V. Max non - repetitive peak voltage 1700V. Max peak reverse and off-state current 15mA.
NTE
-
3
-40°C
125°C
26K
513.
NTE5572Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 600V. Non - repetitive peak reverse blocking voltage, Vrsm = 900V. RMS on-state current, Itrms = 125A.
NTE
-
4
-40°C
125°C
21K
514.
NTE5575Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 200V. Repetitive peak reverse voltage, Vrrm = 200V. RMS on-state current Itrms = 125A.
NTE
-
3
-40°C
125°C
19K
515.
NTE5576Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 600V. RMS on-state current Itrms = 175A.
NTE
-
4
-40°C
125°C
21K
516.
NTE5577Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 600V. Repetitive peak reverse voltage, Vrrm = 600V. RMS on-state current Itrms = 125A.
NTE
-
3
-40°C
125°C
19K
517.
NTE5578Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 1600V. RMS on-state current Itrms = 175A.
NTE
-
4
-40°C
125°C
21K
518.
NTE5579Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 1200V. Repetitive peak reverse voltage, Vrrm = 1200V. RMS on-state current Itrms = 125A.
NTE
-
3
-40°C
125°C
19K
519.
NTE5580Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 200V. Max RMS on-state current It(rms) = 235A.
NTE
-
4
-40°C
125°C
23K
520.
NTE5582Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
NTE
-
4
-40°C
125°C
23K
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