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Found: 830      Displaying: 401 - 420
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
401.
NTE5408Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 200V.
NTE
TO39
3
-40°C
100°C
21K
402.
NTE5409Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 400V.
NTE
TO39
3
-40°C
100°C
21K
403.
NTE5410Silicon controlled rectifier (SCR). 3 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 600V.
NTE
TO39
3
-40°C
100°C
21K
404.
NTE5412Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V.
NTE
TO126
3
-40°C
110°C
21K
405.
NTE5412Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V.
NTE
TO126
3
-40°C
110°C
21K
406.
NTE5413Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 100V.
NTE
TO126
3
-40°C
110°C
21K
407.
NTE5414Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V.
NTE
TO126
3
-40°C
110°C
21K
408.
NTE5415Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 400V.
NTE
TO126
3
-40°C
110°C
21K
409.
NTE5416Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 600V.
NTE
TO126
3
-40°C
110°C
21K
410.
NTE5417Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It = 10A.
NTE
TO220
3
-40°C
110°C
18K
411.
NTE5418Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 10A.
NTE
TO220
3
-40°C
110°C
18K
412.
NTE5419Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It = 10A.
NTE
TO220
3
-40°C
110°C
18K
413.
NTE5424Silicon controlled rectifier (SCR) for TV power supply switcing. Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 5.0A.
NTE
TO220
3
-40°C
100°C
20K
414.
NTE5426Silicon controlled rectifier (SCR). Sensitive gate. Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 10A.
NTE
TO220
3
-40°C
100°C
18K
415.
NTE5426Silicon controlled rectifier (SCR). Sensitive gate. Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 10A.
NTE
TO220
3
-40°C
100°C
18K
416.
NTE5427Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 200V. RMS on-state current It = 7A.
NTE
TO39
3
-40°C
110°C
18K
417.
NTE5428Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 7A.
NTE
TO39
3
-40°C
110°C
18K
418.
NTE5429Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It = 7A.
NTE
TO39
3
-40°C
110°C
18K
419.
NTE5437Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 8A.
NTE
TO220
3
-40°C
125°C
20K
420.
NTE5438Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 600V. RMS on-state current It = 8A.
NTE
TO220
3
-40°C
125°C
20K
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