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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | NTE475 | Silicon NPN transistor. RF power output. | NTE | - | 3 | -65°C | 200°C | 21K |
| 22. | NTE475 | Silicon NPN transistor. RF power output. | NTE | - | 3 | -65°C | 200°C | 21K |
| 23. | NTE476 | Silicon NPN transistor. RF power output. | NTE | - | 3 | -65°C | 200°C | 22K |
| 24. | NTE477 | Silicon NPN transistor. RF power output. | NTE | - | 4 | 0°C | 175°C | 22K |
| 25. | NTE478 | Silicon NPN transistor. RF power output, Po = 100W @ 175 MHz. | NTE | - | 4 | 0°C | 200°C | 22K |
| 26. | NTE48 | Silicon NPN transistor. Darlington, general purpose amplifier, high current. | NTE | - | 3 | -55°C | 150°C | 21K |
| 27. | NTE480 | Silicon NPN transistor. RF power output for broadband amp, Po = 40W @ 512 MHz. | NTE | - | 4 | 0°C | 200°C | 22K |
| 28. | NTE4828 | Surge clamping, transient overvoltage suppressor unidirectional. VR = 15.0V max reverse stand off voltage. | NTE | - | 2 | -55°C | 175°C | 21K |
| 29. | NTE483 | Silicon NPN transistor. RF power output for mobile use, Po = 18W @ 866 MHz | NTE | - | 4 | 0°C | 200°C | 22K |
| 30. | NTE484 | Silicon NPN transistor. RF power output for mobile use, Po = 25W @ 947MHz | NTE | - | 4 | 0°C | 200°C | 22K |
| 31. | NTE4840 | Surge clamping, transient overvoltage suppressor unidirectional. VR = 24.0V max reverse stand off voltage. | NTE | - | 2 | -55°C | 175°C | 21K |
| 32. | NTE4846 | Surge clamping, transient overvoltage suppressor unidirectional. VR = 30.0V max reverse stand off voltage. | NTE | - | 2 | -55°C | 175°C | 21K |
| 33. | NTE4848 | Surge clamping, transient overvoltage suppressor unidirectional. VR = 33.0V max reverse stand off voltage. | NTE | - | 2 | -55°C | 175°C | 21K |
| 34. | NTE4850 | Surge clamping, transient overvoltage suppressor unidirectional. VR = 36.0V max reverse stand off voltage. | NTE | - | 2 | -55°C | 175°C | 21K |
| 35. | NTE4858 | Surge clamping, transient overvoltage suppressor unidirectional. VR = 48.0V max reverse stand off voltage. | NTE | - | 2 | -55°C | 175°C | 21K |
| 36. | NTE486 | Silicon NPN transistor. RF high frequency amplifier. | NTE | TO39 | 3 | - | - | 23K |
| 37. | NTE4868 | Surge clamping, transient overvoltage suppressor unidirectional. VR = 64.0V max reverse stand off voltage. | NTE | - | 2 | -55°C | 175°C | 21K |
| 38. | NTE4868 | Surge clamping, transient overvoltage suppressor unidirectional. VR = 64.0V max reverse stand off voltage. | NTE | - | 2 | -55°C | 175°C | 21K |
| 39. | NTE488 | Silicon NPN transistor. RF power output. | NTE | - | 3 | 0°C | 175°C | 21K |
| 40. | NTE489 | Silicon P-channel JFET transistor. General purpose AF amplifier. | NTE | - | 3 | -55°C | 135°C | 21K |
