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Found: 191      Displaying: 121 - 140
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
121.
NTE326Silicon P-channel JFET transistor. General purpose AF amplifier.
NTE
-
3
-65°C
135°C
21K
122.
NTE327Silicon NPN transistor. Power amplifier, switch.
NTE
TO3
2
-65°C
200°C
24K
123.
NTE328Silicon NPN transistor. Power amplifier, switch.
NTE
TO3
2
-65°C
200°C
25K
124.
NTE329Silicon NPN transistor. RF power amplifier, CB.
NTE
-
3
-
-
24K
125.
NTE3300Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
TO220
3
0°C
150°C
19K
126.
NTE3301Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
TO220
3
0°C
150°C
19K
127.
NTE3302Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
TO220
3
0°C
150°C
19K
128.
NTE3303Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
TO220
3
0°C
150°C
19K
129.
NTE331Silicon complementary NPN transistor. Audio power amp, switch.
NTE
TO220
3
0°C
150°C
21K
130.
NTE3310Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
18K
131.
NTE3311Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
18K
132.
NTE3312Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
18K
133.
NTE332Silicon complementary PNP transistor. Audio power amp, switch.
NTE
TO220
3
0°C
150°C
21K
134.
NTE3320Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
20K
135.
NTE3321Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
20K
136.
NTE3322Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
20K
137.
NTE3323Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
NTE
-
3
0°C
150°C
20K
138.
NTE337Silicon NPN transistor. RF power amp, driver.
NTE
T72H
4
-65°C
200°C
22K
139.
NTE340Silicon NPN transistor. RF power output, high frequency.
NTE
TO92
3
0°C
150°C
19K
140.
NTE342Silicon NPN transistor. RF power output (Po = 6W, 175MHz).
NTE
-
3
0°C
150°C
21K
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